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Circuit and method for preventing EEPROM programming interference

A programming crosstalk and circuit technology, which is applied in the field of electrically erasable read-only memory, can solve problems such as erasing failure and increased circuit power consumption, and achieve the effect of preventing programming crosstalk

Active Publication Date: 2012-07-11
SHANGHAI HUAHONG INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This may cause the erasure of M4 to fail, and increase the power consumption of the circuit to a certain extent

Method used

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  • Circuit and method for preventing EEPROM programming interference
  • Circuit and method for preventing EEPROM programming interference

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Embodiment Construction

[0012] The circuit and method for preventing EEPROM programming crosstalk of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0013] Such as figure 1 As shown, the present invention proposes that a voltage Vx greater than the absolute value of the negative threshold of M3 is added at c in the figure before the erasing of the bits in the EEPROM storage unit starts. After erasing starts, when node h becomes "HV", M1 is turned on so that the voltage at point d is also Vx. At this time, because the source-gate bias voltage of M3 is greater than the absolute value of its threshold voltage, M3 is completely turned off, blocking the leakage path from node f to d (and then to a), thereby effectively preventing programming crosstalk from occurring.

[0014] Vx voltage generation can be done using as figure 2 The circuit shown includes: a first source follower composed of first and second NMOS transistors N1 and N2, and a second...

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PUM

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Abstract

The invention discloses a circuit for preventing EEPROM programming crosstalk, which comprises a bit A and a bit B which are adjacent in an EEPROM memory unit, wherein the bit A comprises a first high-voltage tube (M1) and a first memory unit tube (M3), the bit B comprises a second high-voltage tube (M2) and a second memory unit tube (M4), and a voltage (Vx) which is larger than the absolute value of the negative threshold value of the first memory unit tube (M3) is connected on a position (c) which is connected with a programming / scratching node (a) of the bit A. The invention further discloses a method for preventing the EEPROM programming crosstalk through utilizing the circuit, before scratching the bit B, the voltage (Vx) which is larger than the absolute value of the negative threshold value of the first memory unit tube (M3) is connected on the position (c) which is connected with the programming / erasing node (a) of the bit A. is added. The method can be applied to the programming / the erasing of the EEPROM.

Description

technical field [0001] The invention relates to an electrically erasable read-only memory (EEPROM), in particular to a circuit and method for preventing EEPROM programming crosstalk. Background technique [0002] During the erasing process of an EEPROM memory cell, sometimes two adjacent bits of the same word will interfere with each other, resulting in programming failure. [0003] Now with the help of the present invention figure 1 To illustrate the occurrence of the above crosstalk problem, figure 1 Including two adjacent bits of the same word of the EEPROM unit circuit, where M1 and M2 are high-voltage tubes, and M3 and M4 are EEPROM storage unit tubes. Node g is connected to the control gates of M3 and M4 for program / erase control. Node h is the gate control node of select transistors M1 and M2. When M3 and M4 need to be programmed / erased, node h is a high voltage (for example, 16V) so that nodes a and b are respectively connected to M3 and M4 through M1 and M2. to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
Inventor 韩嘉
Owner SHANGHAI HUAHONG INTEGRATED CIRCUIT