Panel structure and method of manufacturing the same
A manufacturing method and panel technology, which can be used in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., and can solve problems such as occupying more space and affecting the setting of other electronic components.
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no. 1 example
[0058] Please also refer to figure 1 and Figure 2A , figure 1 A schematic diagram showing the panel structure according to the first embodiment of the present invention, Figure 2A draw figure 1 Sectional view of the panel structure in . The panel structure 100 includes a substrate 101 , a plurality of first transistors 110 and a plurality of second transistors 150 . To simplify the illustration, the Figure 2A Only one first transistor 110 and one second transistor 150 are shown in FIG.
[0059]The substrate 101 has a display circuit 102 and a control circuit 108 , wherein the control circuit 108 drives the display circuit 102 to display images. The first transistor 110 is disposed on the display circuit 102 of the substrate 101 , and the first transistor 110 has a first active layer 128 . The second transistor 150 is disposed on the control circuit 108 of the substrate 101 , and the second transistor 150 has a second active layer 168 . Wherein, the material of at le...
no. 2 example
[0085] Please refer to Figure 7A , which shows a cross-sectional view of the panel structure according to the second embodiment of the present invention. Figure 7A The second island structure 260 of the panel structure 200 with Figure 2A The second island structure 160 of the panel structure 100 is different. Although the second island structure 260 of the panel structure 200 also has the second electrode layer 262 , the second opening 264 and the second active layer 268 , the second active layer 268 is disposed on the insulating layer 290 . The second electrode layer 262 is disposed above the second active layer 268 , and the second opening 264 penetrates the second electrode layer 262 to expose the second active layer 268 .
[0086] To simplify the illustration, the Figure 7A Only one first transistor 210 and one second transistor 250 are shown in FIG. However, as mentioned above, the panel structure 200 only has the second island structure 260 and the panel structur...
no. 3 example
[0098] Please refer to Figure 10A , which shows a cross-sectional view of the panel structure according to the third embodiment of the present invention. Figure 10A The second transistor 350 of the panel structure 300 with Figure 2A The second transistor 150 of the panel structure 100 is different. Although the second transistor 350 also has a second gate 351 and a second island structure 360 , the second gate 351 is disposed on the insulating layer 390 , and the second island structure 360 is disposed between the insulating layer 390 and the substrate 301 .
[0099] The second island structure 360 also has a second electrode layer 362 , a second opening 364 and a second active layer 368 . The second electrode layer 362 is disposed on the substrate 301 . The second opening 364 penetrates the second electrode layer 362 to expose the substrate 301 . The second active layer 368 covers the second opening 364 .
[0100] In this embodiment, the panel structure 300 incl...
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