Bond pad structure

Abstract

A bonding pad structure is provided that includes two conductive layers and a connective layer interposing the two conductive layers. The connective layer includes a contiguous, conductive structure. In an embodiment, the contiguous conductive structure is a solid layer of conductive material. In other embodiments, the contiguous conductive structure is a conductive network including, for example, a matrix configuration or a plurality of conductive stripes. At least one dielectric spacer may interpose the conductive network. In an embodiment, the conductive density of the connective layer is between approximately 20% and 100%.

Description

technical field [0001] The present invention generally relates to integrated circuits, and more particularly to a pad structure. Background technique [0002] Integrated circuits are typically formed on substrates such as semiconductor wafers. Bonding pads are included on the substrate, the pads providing contact surfaces to the integrated circuit device whereby electrical connections can be made to the integrated circuit device. Conventional techniques such as thermocompression or thermosonic wire bonding, flip chip techniques, and other techniques known in the art may be used to provide connections from the package terminals to the integrated circuit using pads. [0003] Interconnection technology can cause mechanical stress on the pad structure and the surrounding area, for example from the position of the ball or wedge joint in the wire bonding process or from the bump to the solder joint in the flip chip technology. Pad. Additionally, the pads may be used to provide ...

AI Technical Summary

Problems solved by technology

Stress from soldering, electrical testing, and other possible stressors can cause damage to the pad structure as well as the underlying

Images