Manufacturing method of self-supporting air bridge interconnection structure

Abstract

A manufacturing method of self-supporting air bridge interconnection structure includes that: a semiconductor substrate and one or more than one dielectric material layer arranged on the semiconductor substrate are provided, wherein, a semiconductor device and an interconnection structure are formed on the semiconductor substrate and inside of the dielectric material; the dielectric material layer between the semiconductor device and the interconnection structure is removed; a base material and a first material layer and a second material layer which are arranged on the base material are provided; ion implantation is carried out in the base material through the first material layer and the second material layer to form an ion implanted layer; the second material layer and the interconnection structure farthest from the semiconductor substrate are bonded; and the base material and the first material layer are separated. The method can cause the bonding technology to be simple and controllable, and the base material is formed with the ion implanted layer so that the base material layer can be removed from the first material layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a self-supporting air bridge interconnection structure. Background technique [0002] In the manufacturing process of integrated circuits, dielectric materials are usually used to isolate the components or interconnection structures of integrated circuits. The dielectric materials include silicon nitride, silicon oxide, silicon oxynitride, etc. These materials have better Insulation properties, high dielectric constant. Due to its high dielectric constant, the parasitic capacitance between adjacent conductive elements is also large. With the increasing integration of integrated circuits, the distance between adjacent conductive elements is getting smaller and smaller, and the number of layers of integrated circuits is getting higher and higher, so dielectric materials with lower dielectric constants must be used. [0003] The diele...

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Problems solved by technology

[0007] In view of this, the technical problem solved by the present invention is to provide a method for fabricating a self-supporting air bridge interconnection structure, which solves the problem that the wafer thickness is not easy to bond when the wafer is bonded to the interconnection structure on the semiconductor substrate in the prior art. control, defects that cause bonding difficulties

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