Manufacturing method of self-supporting air bridge interconnection structure
A technology of interconnection structure and manufacturing method, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of difficult control of wafer thickness and difficult bonding, etc., and achieve the effect of simple and controllable bonding process
Inactive Publication Date: 2010-08-11
SEMICON MFG INT (BEIJING) CORP
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Problems solved by technology
[0007] In view of this, the technical problem solved by the present invention is to provide a method for fabricating a self-supporting air bridge interconnection structure, which solves the problem that the wafer thickness is not easy to bond when the wafer is bonded to the interconnection structure on the semiconductor substrate in the prior art. control, defects that cause bonding difficulties
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[0025] This embodiment provides a manufacturing method of a self-supporting air bridge interconnection structure, including: providing a semiconductor substrate and one or more dielectric material layers on the semiconductor substrate, the semiconductor substrate and the dielectric material The semiconductor device and the interconnection structure are formed; the dielectric material layer between the semiconductor device and the interconnection structure is removed; the base material and the first material layer and the second material layer on the base material are provided; through the first material layer and The second material layer is ion implanted in the base material to form an ion implantation layer; bonding the second material layer and the interconnect structure farthest from the semiconductor substrate; separating the base material and the first material layer.
[0026] A semiconductor substrate is provided. The semiconductor substrate is a semiconductor material such...
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A manufacturing method of self-supporting air bridge interconnection structure includes that: a semiconductor substrate and one or more than one dielectric material layer arranged on the semiconductor substrate are provided, wherein, a semiconductor device and an interconnection structure are formed on the semiconductor substrate and inside of the dielectric material; the dielectric material layer between the semiconductor device and the interconnection structure is removed; a base material and a first material layer and a second material layer which are arranged on the base material are provided; ion implantation is carried out in the base material through the first material layer and the second material layer to form an ion implanted layer; the second material layer and the interconnection structure farthest from the semiconductor substrate are bonded; and the base material and the first material layer are separated. The method can cause the bonding technology to be simple and controllable, and the base material is formed with the ion implanted layer so that the base material layer can be removed from the first material layer.
Description
Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a self-supporting air bridge interconnection structure. Background technique [0002] In the manufacturing process of integrated circuits, the components or interconnection structures of integrated circuits are usually separated by dielectric materials. The dielectric materials include silicon nitride, silicon oxide, silicon oxynitride, etc. These materials have good properties. Insulation properties, high dielectric constant. Due to its high dielectric constant, the parasitic capacitance between adjacent conductive elements is also large. With the increasing integration of integrated circuits, the distance between adjacent conductive elements is getting smaller and smaller, and the number of layers of the integrated circuit is getting higher and higher, so dielectric materials with a smaller dielectric constant must be used. [0003] The ...
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IPC IPC(8): H01L21/768
Inventor 肖德元郭景宗刘永
Owner SEMICON MFG INT (BEIJING) CORP