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Preparation method of SiBOC precursor

A precursor, volume ratio technology, applied in the field of precursor preparation, can solve the problems of difficult ceramic products, poor spinnability of SiBOC precursor, etc., to achieve excellent spinnability and impregnation, dense and smooth surface without voids, excellent mechanical properties performance effect

Inactive Publication Date: 2010-08-18
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the SiBOC precursor prepared by the existing method has poor spinnability, and it is difficult to prepare a ceramic product with ideal chemical composition and uniform structure, and provides a preparation method for the SiBOC precursor

Method used

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  • Preparation method of SiBOC precursor
  • Preparation method of SiBOC precursor
  • Preparation method of SiBOC precursor

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specific Embodiment approach 1

[0008] Specific embodiment 1: The preparation method of the SiBOC precursor in this embodiment is carried out according to the following steps: 1. Hydrogen-containing siloxane and alcohols are mixed according to the volume ratio of 1:1~1.5 to obtain a mixture, and then added to account for the volume percentage of the mixture. 0.05%~1% ethylenediamine, react at room temperature for 2.5~3.5 months to obtain alkoxysiloxane; 2. The alkoxysiloxane and boric acid obtained in step 1 are 1 according to the Si / B molar ratio Mix at a ratio of 0.025 to 1, then add the same alcohols as in step 1 until the boric acid is completely dissolved, and reflux at 64 to 100°C for 2 to 10 hours to obtain the SiBOC precursor; the hydrogen-containing silicon in step 1 Oxane is hydrogen-containing siloxane or hydrogen-containing polysiloxane, hydrogen-containing siloxane is tetramethylcyclotetrasiloxane or tetramethyldihydrogensiloxane, and hydrogen-containing polysiloxane is polymethyl Hydrogen silic...

specific Embodiment approach 2

[0019] Embodiment 2: This embodiment is the same as Embodiment 1 in that in step 1, hydrogen-containing siloxane and alcohols are mixed in a volume ratio of 1:1.2~1.4. Other steps and parameters are the same as those in the first embodiment.

specific Embodiment approach 3

[0020] Embodiment 3: This embodiment is the same as Embodiment 1 in that in step 1, hydrogen-containing siloxane and alcohols are mixed in a volume ratio of 1:1.3. Other steps and parameters are the same as those in the first embodiment.

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Abstract

The invention relates to a preparation method of a SiBOC precursor, relating to a preparation method of a precursor and solving the problems of the SiBOC precursor prepared by the prior art that the spinnability is poor and ceramic with ideal chemical composition and even texture is relatively difficult to prepare. The preparation method comprises the steps of: 1. preparing alkoxy silane; and 2. preparing the SiBOC precursor. The SiBOC precursor prepared by the method has good spinnability, can be used to prepare continuous fibers with diameter about 10mum, round section and good performance and can be used to prepare SiBOC ceramics with excellent mechanical property and high-temperature stability.

Description

technical field [0001] The invention relates to a preparation method of a precursor. Background technique [0002] The Si-C-O system ceramics prepared by the precursor conversion method can convert SiO 2 Part of the divalent O in the structure is replaced by tetravalent C, and its structure is more stable. Compared with silicon oxide, Si-O-C ceramics have better high temperature stability and mechanical properties, but above 1300 ° C, Si-O-C ceramics are due to It decomposes by carbothermal reduction reaction. The study found that the introduction of B element can significantly improve the high-temperature performance of the material, and the synthesized Si-B-O-C system material can inhibit the crystallization of cristobalite, improve the mechanical properties of the material, and its decomposition temperature is increased to above 1500 ° C. more excellent. Therefore, Si-B-O-C system materials have good application prospects in the high temperature field. In order to obt...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/622
Inventor 温广武白宏伟韩兆祥黄小萧胡自翔张晓东
Owner HARBIN INST OF TECH
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