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Power semiconductor module including substrates spaced from each other

A technology for power semiconductors and substrates, used in semiconductor devices, semiconductor/solid-state device components, electrical solid-state devices, etc., to solve problems such as increased complexity, large footprint, and ceramic cracking

Active Publication Date: 2013-11-20
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such power semiconductor modules without a common substrate have the disadvantage of a complex system of multiple junction points between the power semiconductor modules and the heat sink or the need to manufacture mounting holes in the ceramic substrate, again adding complexity, occupying the substrate precious space on the surface, preventing heat from being dissipated to the heat sink, and to make matters worse, there is a risk of ceramic cracking in the area of ​​each hole
[0007] Furthermore, the higher the number of power semiconductor chips incorporated in a power semiconductor module, the larger the required substrate and its larger footprint, making it more difficult to obtain a uniform contact pressure of the substrate with respect to the heat sink

Method used

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  • Power semiconductor module including substrates spaced from each other
  • Power semiconductor module including substrates spaced from each other
  • Power semiconductor module including substrates spaced from each other

Examples

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Embodiment Construction

[0028] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the invention may be practiced. In this regard, directional terms, such as "top", "bottom", "front", "rear", "leading", "trailing", etc., are used with reference to the orientation of the depicted figure(s). Since components of an embodiment may be positioned in many different orientations, directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description should not be read in a limiting sense, and the scope of the invention is defined by the appended claims.

[0029] now refer to figure 1 , shows a perspective view of a power semiconductor module 1...

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Abstract

The invention relates to a power semiconductor module including a module underside, a module housing, and at least two substrates spaced from each other. Each substrate has a topside facing an interior of the module housing and an underside facing away from the interior of the module housing. The underside of each substrate includes at least one portion simultaneously forming a portion of the module underside. At least one mounting means disposed between two adjacent substrates enables the power semiconductor module to be secured to a heatsink.

Description

technical field [0001] The invention relates to power semiconductor modules. Background technique [0002] A power semiconductor module includes one or more power semiconductor chips. In order to dissipate heat materializing in the operation of the module, the power semiconductor module is usually bonded to a heat sink. This mainly involves complex systems employing multiple bonds in order to distribute the pressure evenly. [0003] In addition, the modules are often electrically and mechanically bonded to user-specific gating circuits, which in turn requires a complex system of multiple bonding points to make the necessary electrical connections. [0004] The power semiconductor chips of the modules are often mounted on one or more ceramic substrates due to their thermal expansion coefficients which, on the one hand, hardly differ from those of the semiconductor chips used and, on the other hand, because they implement power Good thermal dissipation of semiconductor chip...

Claims

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Application Information

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IPC IPC(8): H01L25/07H01L25/18H01L25/16H01L23/40
CPCH02M7/003H01L23/3121H05K7/209H01L2924/01004H01L24/48H01L23/3735H01L2023/4081H01L23/49811H01L2924/13091H01L24/39H01L25/072H01L2023/405H01L2224/48472H01L2224/48091H01L2023/4062H01L2924/13055H01L23/4006H01L2924/014H01L2924/1301H01L2924/1305H01L2924/181H01L2924/00014H01L2224/371H01L2224/37599H01L24/37H01L2224/84801H01L24/84H01L2924/19107H01L24/40H01L2924/00H01L2924/00012H01L2224/45099H01L2224/45015H01L2924/207H01L2224/73221
Inventor T·斯托尔策O·霍尔费尔德P·坎沙特
Owner INFINEON TECH AG
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