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Biosensor, probe, sensing device and biosensor manufacturing method

A biosensor and probe technology, applied in sensors, instruments, measuring devices, etc., can solve the problems of inability to accurately reflect changes in dopamine concentration and low sensitivity

Inactive Publication Date: 2012-05-30
RAYDIUM SEMICON +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the sensitivity of ion-selective field-effect transistors is not high (the measurement range is about 1 μM), and due to the low concentration of dopamine in the brain, ion-selective field-effect transistors cannot accurately reflect the concentration of dopamine in the brain The change

Method used

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  • Biosensor, probe, sensing device and biosensor manufacturing method
  • Biosensor, probe, sensing device and biosensor manufacturing method
  • Biosensor, probe, sensing device and biosensor manufacturing method

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Embodiment Construction

[0040] see figure 1 , figure 1 A schematic diagram of a biosensor 1 according to a specific embodiment of the present invention is shown. Such as figure 1 As shown, the biosensor 1 includes a nanowire field effect transistor 10, a connecting functional group 12 and a test base 14, wherein the nanowire field effect transistor 10 is provided with a nanowire 100, and the connecting functional group 12 is connected to the surface of the nanowire 100 . In addition, the test group 14 is connected to the linking functional group 12 . Please note that for the sake of brevity, the figure 1 It is only shown that the nanowire 100 on one side is connected to the test base 14 and the functional group 12 , but in practical applications, the nanowire 100 on the other side can also be connected to the test base 14 and the functional group 12 .

[0041] In practical applications, the two ends of the nanowire 100 can be connected to two electrodes as the drain and source of the nanowire fi...

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Abstract

The invention provides a biosensor for detecting the concentration of dopamine in brain and a manufacturing method thereof. The biosensor comprises a nanowire field effect transistor, a linking functional group and a test base, wherein, the nanowire field effect transistor is provided with nanowires; the linking functional group is connected with the nanowires; and the test base is connected on the linking functional group and is used for connecting at least one dopamine. When the test base is connected with at least one dopamine, the nanowire field effect transistor can generate sensing signals according to the quantity of at least one dopamine. The biosensor of the invention can accurately sense the concentration of the dopamine in brain, thus the biosensor can be used in instruments inneed of accurate measurement such as a brain probe and the like. The invention further provides a probe for detecting the concentration of the dopamine in brain and a sensing device for detecting theconcentration of the dopamine in brain.

Description

technical field [0001] The present invention relates to a biosensor, a probe and a sensing device for sensing the concentration of dopamine in the brain. The present invention also relates to a biosensor and sensing device composed of nanowire field effect transistors, and the production of the biosensor method. Background technique [0002] There are up to 1 trillion nerve cells in the human brain, which are interconnected by complex neural networks, and chemical molecules are used as information transmission media between nerve cells. Among them, dopamine is an important neurotransmitter that controls brain functions, such as movement, emotion, and higher cognitive abilities. [0003] According to research, insufficient dopamine concentration in the brain can cause people to lose the ability to control muscles, and severe cases may lead to Parkinson's disease. Conversely, if the concentration of dopamine is too high, the patient may have hallucinations, delusions, irrita...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): A61B5/05A61B5/00G01N27/414
Inventor 杨裕雄王威刘承贤徐琅林志衡萧程允周忠诚
Owner RAYDIUM SEMICON