Grating external cavity semiconductor laser

A semiconductor and laser technology, which is applied in the field of grating external cavity semiconductor lasers, can solve the problems of unadjustable optical feedback intensity, affecting the single-mode non-mode-hopping range and linewidth of semiconductors, and achieve the effect of narrow linewidth output.

Inactive Publication Date: 2013-08-07
NAT INST OF METROLOGY CHINA
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Problems solved by technology

However, the optical feedback intensity of the above-mentioned semiconductor laser cannot be adjusted, which directly affects the single-mode non-mode-hopping range and line width of the semiconductor

Method used

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  • Grating external cavity semiconductor laser
  • Grating external cavity semiconductor laser
  • Grating external cavity semiconductor laser

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Embodiment Construction

[0025] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0026] The grating external cavity semiconductor laser of the present invention mainly includes a semiconductor laser tube, a grating and a half-wave plate. The light emitted by the semiconductor laser tube enters the grating through the half-wave plate, the zero-order diffracted light of the grating is used as the output light of the semiconductor laser, and the first-order diffracted light of the grating returns along the original path as the feedback light; The half-wave plate is adjusted by changing the polarization direction of the incident light.

[0027] see image 3 As shown, it is a schematic structural diagram of a Littrow structure external cavity semiconductor laser. A half-wave plate 6 is provided between the collimating lens...

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Abstract

The invention discloses a grating external cavity semiconductor laser, which mainly comprises a semiconductor laser tube, a grating and a half-wave plate. Light emitted by the semiconductor laser tube is transmitted to the grating through the half-wave plate; zero-level diffraction light of the grating serves as output light of the semiconductor laser and primary diffraction light of the grating serves as feedback light to return along with an original path; and the intensity of the feedback light is adjusted by rotating the half-wave plate to change the polarization direction of the incidentlight. The feedback intensity of the grating external cavity semiconductor laser is controlled so as to realize wider single-mode mode-jump-free range and narrower line width output of an external cavity semiconductor.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a grating external cavity semiconductor laser with adjustable feedback. Background technique [0002] Semiconductor lasers, including distributed feedback (DFB) and external cavity semiconductor lasers are important laser light sources in scientific research and industry. However, the output spectral lines of common external cavity semiconductor lasers are very wide, generally reaching hundreds of kilohertz or even several megahertz. DFB semiconductor lasers Often have wider line widths, which exist far from the application requirements of many occasions. Commonly used external cavity semiconductor lasers can be divided into Littrow structure, Littman structure, such as figure 1 and 2 shown. However, the optical feedback intensity of the above-mentioned semiconductor laser cannot be adjusted, which directly affects the single-mode non-mode-hopping range and line w...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/14H01S5/065H01S5/06
Inventor 臧二军彭瑜曹建平李烨方占军
Owner NAT INST OF METROLOGY CHINA
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