Method for determining consistency boundary of accelerated degradation mechanism based on single parameter

Abstract

The invention discloses a method for determining consistency boundary of an accelerated degradation mechanism based on a single parameter, comprising the steps of: taking an Arrhenius model which is an accelerated degradation model of an electronic device- as a research object; then combining three common degradation models, including a linear model, an index model and a power model, to deduce a stress-slope formula which ensures that the accelerated mechanism of the electronic device is not changed from a point that the activation energy is not changed; and finally determining a boundary design stress of an electronic device accelerated degradation test according to a slope interval test method of the linear model. Through the invention, the defect that the boundary stress of the accelerated degradation test cannot be determined through a pseudo life distribution parameter homogeneity test method of the electronic device due to the simulation result certainty is successfully overcome, and a mass of samples and funds are saved; when the test level alpha in the slope interval test is 0.1, an obtained slope confidence interval is narrower than a slope confidence interval obtained when alpha is 0.01 or 0.05; and the accelerated degradation test under stress Tm is effectively ensured to be safe under the condition of that the acceleration effect is not influenced.

Description

technical field [0001] The invention provides a method for determining the consistency boundary of a single-parameter accelerated degradation mechanism, which relates to a method for determining the boundary stress of a high-temperature degradation test, in particular a method for determining the consistency boundary of a single-parameter accelerated degradation mechanism, which belongs to accelerated degradation Field of Experimental Design of Experiments. Background technique [0002] High-temperature degradation tests of electronic devices are often used to quickly obtain their (pseudo) life information. The life information of electronic devices obtained from high-temperature degradation tests can be used to extrapolate their life distribution at room temperature. This type of test can save a lot of time. and fees. Because the potential failure mechanism of electronic devices may be stimulated under high-temperature accelerated conditions and become the main failure mec...

AI Technical Summary

Problems solved by technology

Because the potential failure mechanism of electronic devices may be stimulated under high-temperature accelerated conditions, and become the main failure mechanism, the accelerated failure mechanism will be changed, so that the real life information of electronic devices cannot be obtained, and the test time and cost will be wasted.

Therefore, an important prerequisite for implementing high-temperature degradation tests is that electronic devices should have the same failure mechanism under different stresses. In the degradation test, the failure mechanism corresponding to various stresses is not known before the test, and the acceleration mechanism cannot be guaranteed, which seriously reduces the scientificity of the accelerated test design and the effectiveness of the result analysis

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