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Terahertz oscillation method based on carbon nanometer tube and terahertz oscillator

A carbon nanotube and terahertz technology, which is applied in the field of semiconductor optoelectronic devices, can solve the problems of unavailable device manufacturing methods and reports

Inactive Publication Date: 2013-10-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the method of using the negative differential drift velocity characteristic of semiconducting carbon nanotubes to generate THz current oscillation has not been reported, and at the same time, there is no report on the fabrication method of related devices

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  • Terahertz oscillation method based on carbon nanometer tube and terahertz oscillator
  • Terahertz oscillation method based on carbon nanometer tube and terahertz oscillator
  • Terahertz oscillation method based on carbon nanometer tube and terahertz oscillator

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Embodiment Construction

[0029] The specific implementation manner of the present invention will be further described below in conjunction with the accompanying drawings.

[0030] See figure 1 , a carbon nanotube THz oscillator consisting of a chip and peripheral circuits connected to it.

[0031] The chip includes: a semiconducting carbon nanotube 1 and electrodes 2 and 3 located at both ends of the semiconducting carbon nanotube 1, the semiconducting carbon nanotube 1 forms an ohmic contact with the electrodes 2 and 3 at both ends of the semiconducting carbon nanotube, and the chip passes through the The electrodes 2 and 3 are connected to peripheral circuits.

[0032] The peripheral circuit includes: two coaxial cables 6, a DC voltage source 7 and a high-frequency signal output module 8; the two coaxial cables 6 are respectively in contact with the electrodes 2 and 3 through high-frequency probes; The DC voltage source 7 is connected in series with the inductor, connected between the two coaxial ...

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Abstract

The invention provides a terahertz oscillation method based on a carbon nanometer tube. Direct-current bias voltage is applied to two ends of a semiconductor carbon nanometer tube so that the drifting speed of the electrons in the semiconductor carbon nanometer tube is arranged in the negative differential drifting speed area, thus generating the oscillation current that changes periodically withthe time in the semiconductor carbon nanometer tube. Furthermore, the invention also provides a terahertz oscillator capable of realizing the method and a manufacturing method for the terahertz oscillator. The terahertz oscillator of the carbon nanometer tube consists of a chip and a peripherical circuit that is connected with the chip. Being as a novel solid-state THz oscillator, the terahertz oscillator has the advantages of having a simple structure, being integrated easily, being capable of running under room temperature and the like, and is expected to be widely applied to the spatial wireless communication systems in the future.

Description

technical field [0001] The invention relates to a working method, a device structure and a manufacturing method of a terahertz (THz) oscillator, in particular to a method for generating THz waves by using carbon nanotubes, a device structure for realizing the method and a manufacturing method thereof. The invention belongs to the technical field of semiconductor optoelectronic devices. Background technique [0002] A carbon nanotube is a quasi-one-dimensional material with a simple structure composed of carbon atoms. Geometrically, it can be regarded as a curled single-layer graphite. Since the discovery of carbon nanotubes [S. Iijima, Helicalmicrotubules of graphite carbon, Nature 354, 56 (1991)], electronic and photonic properties based on semiconducting carbon nanotubes have attracted research interest. This is mainly because semiconducting carbon nanotubes have unique electron transport properties that insulating and metallic carbon nanotubes do not possess. It has bee...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03B5/04C01B31/00
Inventor 王长曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI