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Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition

A technology of resin composition and actinic ray, which is applied in the photoplate-making process of patterned surface, photosensitive material for optomechanical equipment, optics, etc., can solve the problem of unstable resist composition and achieve pattern shape Effects of improved and line edge roughness and high stability

Active Publication Date: 2015-02-11
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As a result of the inventors' investigations, it is apparent that the use of compounds with a basic moiety which generates an acid upon exposure to radiation thereby making it less basic or neutral tends to result in an unstable resist composition

Method used

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  • Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
  • Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
  • Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0751] Synthesis Example 1 (Synthesis of Monomer (Compound (4)))

[0752] [Compound (1)]

[0753] Compound (1) shown below was synthesized by the method described in International Publication No. 07 / 037213 (single volume).

[0754] [Compound (2)]

[0755] Water in an amount of 150.00 g was added to 35.00 g of Compound (1), and 27.30 g of NaOH was further added to the mixture. The resulting mixture was stirred while heating at reflux for 9 hours. Subsequently, hydrochloric acid was added to acidify the mixture. Thereafter, extraction with ethyl acetate was performed. The organic phase was collected and concentrated to obtain 36.90 g of compound (2) (yield 93%).

[0756] 1 H-NMR (400MHz, in (CD 3 ) 2 CO): σ(ppm)=1.56-1.59(1H), 1.68-1.72(1H), 2.13-2.15(1H), 2.13-2.47(2H), 3.49-3.51(1H), 3.68(1H), 4.45 -4.46(1H)

[0757] [Compound (3)]

[0758] 200ml of CHCl 3 To 20.00 g of compound (2), 50.90 g of 1,1,1,3,3,3-hexafluoroisopropanol and 30.00 g of 4-dimethylaminopyridin...

Embodiment 2

[0764] Synthesis Example 2: Synthesis of Hydrophobic Resin (C-7)

[0765] Monomers corresponding to the repeating units shown below were charged at a molar ratio of 90 / 10 and dissolved in PGMEA to obtain 450 g of a solution with a solid content of 15% by mass. Thereafter, 1 mol % of a polymerization initiator V-60 manufactured by Wako Pure Chemical Industries, Ltd. was added to the solution. The resulting mixture was dropped into 50 g of PGMEA heated at 100° C. in a nitrogen atmosphere over a period of 6 hours. After the dropwise addition was completed, the reaction liquid was stirred for two hours. After the reaction was completed, the reaction liquid was cooled to room temperature and crystallized in 5 liters of methanol. The white powder thus precipitated was collected by filtration. Thus, the desired resin (C-7) was recovered.

[0766] The polymer composition ratio measured by NMR was 90 / 10. As determined by GPC measurement, its weight average molecular weight based o...

Embodiment 1 to 35 and comparative example 1 and 2

[0770]

[0771] Dissolution of the components in the solvent as shown in Table 3 below was performed so as to obtain a solution with a solid content of 5% by mass. The solution was passed through a polyethylene filter with a pore size of 0.1 μm to obtain a positive resist composition. The positive resist composition thus obtained was evaluated by the following method, and the evaluation results are shown in Table 4.

[0772]

[0773] An organic antireflection film ARC29A (manufactured by Nissan Chemical Industries, Ltd.) was coated on a silicon wafer and baked at 205° C. for 60 seconds, thereby forming an antireflection film with a thickness of 98 nm. Each of the prepared positive resist compositions was coated thereon and baked at 130° C. for 60 seconds, thereby forming a 120 nm-thick resist film. The resulting wafer was exposed by an ArF excimer laser liquid-immersion scanner (manufactured by ASML, XT1700i, NA 1.20) through a 6% dot mask of 65 nm 1:1 line and space patt...

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Abstract

According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes any of the compounds of general formula (I) below, a compound that when exposed to actinic rays or radiation, generates an acid and a hydrophobic resin. (The characters used in general formula (I) have the meanings mentioned in the description.) RN-A−X+  (I)

Description

technical field [0001] The present invention relates to actinic ray-sensitive or radiation-sensitive resin compositions suitable for use in ultramicrolithography or other photoprocessing methods for the manufacture of ultra-large-scale integrated circuits or large-capacity microchips, etc., And the present invention also relates to a method of forming a pattern using the composition. More specifically, the present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition particularly useful when the exposure light source is ArF excimer laser or KrF excimer laser, and also relates to a method of forming a pattern using the composition. [0002] In the present invention, the terms "actinic ray" and "radiation" mean, for example, bright-line spectrum from a mercury lamp, deep ultraviolet ray represented by excimer laser, extreme ultraviolet ray, X-ray, electron beam and the like. In the present invention, the term "light" means actinic rays or radiat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/039H01L21/027
CPCG03F7/0045G03F7/0758G03F7/11G03F7/2041G03F7/0397G03F7/0046G03F7/004G03F7/0392G03F7/20H01L21/0271
Inventor 片冈祥平涩谷明规山口修平留场恒光
Owner FUJIFILM CORP