Method for manufacturing ohmic contact electrode with improved optical performance
A technology of ohmic contact electrodes and manufacturing methods, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of low light output efficiency of light-emitting diodes, low device optical performance, and low market acceptance rate, so as to avoid low light output efficiency and light emission. The effect of uniform area and simple and convenient production process
Inactive Publication Date: 2012-07-11
BEIJING TIMES HAODING TECH
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In the manufacturing process of semiconductor devices, the ohmic contact of the P-type region and the N-type region generally adopts different alloy materials and alloying processes, and the alloy forming the ohmic contact (ohmic contact) is produced by evaporation, photolithography, and etching processes. (ohmic contact) The size of the electrode is the same as that of the chip electrode. After the working current is applied, part of the light in the light-emitting layer is blocked by the electrode when it is emitted from the active region to the surface of the epitaxial layer and cannot be emitted, resulting in low light-emitting efficiency of the light-emitting diode. Low efficiency, low brightness
[0003] So far, the electrode size of the ohmic contact layer made in the prior art and the chip electrode size are generally large, so a large amount of light is blocked under the metal electrode and cannot be emitted, so that the optical performance of the fabricated device is obviously low. Narrow application, low market acceptance rate, virtually increased manufacturing costs
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[0028] A method for manufacturing an ohmic contact electrode with improved light performance in the present invention can be realized by the following implementation methods:
[0029] First, the epitaxial wafer (such as figure 1 Shown in 4) in the normal temperature mixed solution (ammonium hydroxide: hydrogen peroxide: water) for 3-4 minutes, the ratio of the mixed solution can be: ammonium hydroxide: hydrogen peroxide: water = 2: 1: 5, then rinse with deionized water Clean, then soak in 55 ° C mixed solution (sulfuric acid, hydrogen peroxide, water) for 30 seconds, the ratio of the mixed solution can be sulfuric acid: hydrogen peroxide: water = 5: 1: 1, then rinse with deionized water, and place it in Tumble dry in a tumble dryer. followed by evaporation in an electron beam evaporation station Gold-beryllium alloy layer (such as figure 2 shown in 1), and then make dot-shaped (dots) ohmic contact layer electrodes (such as image 3 shown in 1), then carry out the alloyin...
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Abstract
The invention discloses a manufacturing method for forming a dot-shaped ohmic contact layer on the surface of a semiconductor material (such as an epitaxial wafer) by using contact alloy, a high-light transmittance material ITO and a SiO2 material. The manufacturing method comprises the following steps: firstly, evaporating dot-shaped contact alloy AuBe on the surface of the semiconductor material (such as the epitaxial wafer); secondly, photoetching and etching; thirdly, thermally processing so as to oxidize transition metal; fourthly, evaporating ITO and SiO2 on the surface; and finally, finishing manufacturing of an ohmic contact electrode by a photoetching and etching technology. By the method, the light-emitting area of a semiconductor device can be increased and the external quantum efficiency can be improved.
Description
technical field [0001] The invention relates to a method for manufacturing an ohmic contact layer of a semiconductor, in particular to the technical field of an ohmic contact layer applied to a light-emitting diode with high brightness and high light extraction efficiency. Background technique [0002] In recent years, semiconductor materials have been widely used in photodiodes, laser diodes, photodetectors, and microelectronic components. Light-emitting diodes have been successfully developed into high-brightness commercial products, and good ohmic contact is very important in these devices. In the manufacturing process of semiconductor devices, the ohmic contact of the P-type region and the N-type region generally adopts different alloy materials and alloying processes, and the alloy forming the ohmic contact (ohmic contact) is produced by evaporation, photolithography, and etching processes. (ohmic contact) The size of the electrode is the same as that of the chip elect...
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IPC IPC(8): H01L33/38H01L33/40
Inventor杨继远
OwnerBEIJING TIMES HAODING TECH