Semiconductor opening switch (SOS)-based ultra-wide spectrum pulse generator with 100 kHz pulse frequency

A pulse generator and ultra-wide spectrum technology, applied in the direction of electric pulse generator circuits, etc., can solve the problems of low energy efficiency, difficulty in achieving both repetition frequency and pulse width, and reduce the number of series series and reverse pump. Pu inductance, the effect of increasing the output voltage

Active Publication Date: 2014-12-31
NORTHWEST INST OF NUCLEAR TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The output voltage is 120kV on a 125Ω load, the pulse width is 5~6ns, the highest repetition frequency is 1kHz, and the system energy efficiency is lower than 10%.
[0009] The current technology of using SOS to generate high-voltage short pulses has problems such as low energy efficiency, difficulty in achieving both repetition frequency and pulse width, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor opening switch (SOS)-based ultra-wide spectrum pulse generator with 100 kHz pulse frequency
  • Semiconductor opening switch (SOS)-based ultra-wide spectrum pulse generator with 100 kHz pulse frequency
  • Semiconductor opening switch (SOS)-based ultra-wide spectrum pulse generator with 100 kHz pulse frequency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The SOS-based 100 kHz ultra-broadband pulse generator in this embodiment is composed of a single module; the components of the single module are all placed on a copper substrate covered with an FR-4 insulating material layer to form a layer structure;

[0026] refer to figure 2 , image 3 , the center of the single module is a cylindrical structure 13; the outside of the cylindrical structure 13 is an annular box-shaped structure 11, both materials are copper, and both are coaxial; the outer circumference of the annular box-shaped structure 11 is uniformly distributed with 8 small columns of copper material 10. The annular box-shaped structure 11 is equipped with a ring-shaped transformer core 12; the outermost circumference of the single module is uniformly distributed with 4 groups of primary low-voltage fast pulse generation units composed of primary energy storage capacitors 7, MOSFET8 and trigger 9; primary storage The energy capacitor 7 is 150nF; in the primary l...

Embodiment 2

[0030] An SOS-based 100 kHz ultra-wide spectrum pulse generator, which is composed of 10 identical single modules connected in series; the components of each single module are all covered with FR-6 type insulating material layer on the steel base to form a layer structure;

[0031] refer to figure 2 , image 3 , the center of the single module is a cylindrical structure 13; the outside of the cylindrical structure 13 is an annular box-shaped structure 11, both materials are steel, and both are coaxial; the outer circumference of the annular box-shaped structure 11 is uniformly distributed with 16 small steel materials Column 10; annular box-shaped structure 11 is equipped with annular transformer core 12; the outermost circumference of the single module is uniformly distributed with 6 groups of primary low-voltage fast pulse generating units composed of primary energy storage capacitor 7, MOSFET 8 and trigger 9; primary The energy storage capacitor 7 is 150nF; in the primary ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor opening switch (SOS)-based ultra-wide spectrum pulse generator with 100 kHz pulse frequency, and belongs to the technical field of pulse power. The pulse generator comprises a charging power supply, a primary low-voltage quick pulse generation unit, a magnetic saturation linear transformer, a pumping capacitor, an SOS and a load in sequence. A plurality of primary low-voltage quick pulse generation units are uniformly arranged at the periphery of each single module and thus the primary current output capacity is increased. A trigger controls the on and off of a metal oxide semiconductor field effect transistor (MOSFET) to generate scores of ns to hundreds of ns pulse with a repeated frequency of 100kHz. The magnetic saturation linear transformer is formed by connecting a plurality of single modules in series. On one hand, the output voltage can be increased by increasing the series number of the single module; on the other hand, after the transformer core is saturated, the secondary side is a coaxial squirrel cage structure, the inductance of a reversed pump is reduced, the time of a reversed current pump can be shortened, an SOS quickly cuts off current, and a high-voltage ultra-wide spectrum pulse is generated in the load. A mismatching charging mode from a primary energy storage large capacitance to a secondary pump small capacitance is used to obtain a high voltage on a pumping capacitor; and on the other hand, under the same target voltage, the series number of the single module is reduced, the inductance of the reversed pump is reduced, and 100kHz ultra-wide spectrum pulse generation is promoted.

Description

technical field [0001] The invention belongs to the technical field of pulse power, and relates to a repetition frequency high-power ultra-wide spectrum pulse generator, in particular to a 100 kHz ultra-wide spectrum pulse generator based on SOS (Semiconductor Opening Switch). Background technique [0002] Ultra-broad spectrum pulse refers to a high-voltage electrical pulse with a leading time of less than 1-2 nanoseconds and a relative bandwidth of more than 25%. Its spectrum can range from tens of MHz to upper GHz. High repetition rate ultra-wide spectrum pulse (repetition frequency: tens of kHz to hundreds of kHz; pulse width: sub ns to several ns) has broad application prospects in electronic countermeasures, biomedicine, plasma generation and other fields, generating high repetition rate The key to ultra-broadband pulses lies in the generation of high-voltage short pulses with fast pulse fronts. [0003] Although the ultra-broadband pulse source with gas switch as the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H03K3/02
Inventor 苏建仓王刚丁臻捷袁雪林范菊平潘亚峰浩庆松方旭胡龙
Owner NORTHWEST INST OF NUCLEAR TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap