A strained BiCMOS integrated device based on triple polycrystalline sige HBT and its preparation method

Abstract

The invention discloses a strain BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor Transistor) integrated device based on a tri-polycrystal SiGe HBT (Heterojunction Bipolar Transistor) and a preparation method thereof. The preparation method comprises the steps of: first, preparing the tri-polycrystal SiGe HBT on a Si substrate by a self-aligning process; then, respectively growing an N type Si epitaxial layer, an N type strain SiGe layer, a P type strain SiGe layer, an N type strain SiGe layer, and an N type Si layer as well as an N type Si layer, an N type strain SiGe layer, and an N type Si cap layer in active regions of an NMOS (N-channel Metal Oxide Semiconductor) device and a PMOS (P-channel Metal Oxide Semiconductor) device on the substrate to prepare a drain electrode, a grid electrode and a source region in the active region of the NMOS device so as to prepare the NMOS device; and preparing a virtual grid electrode in the active region of the PMOS device, depositing a dielectric layer to form a grid side wall, and injecting and forming a source electrode and a drain electrode of the PMOS device by the self-aligning process to form the grid electrode to prepare the PMOS device, so as to form the strain BiCMOS integrated device and a circuit, wherein the channel of an MOS (Metal Oxide Semiconductor) device is 22-45nm. According to the strain BiCMOS integrated device based on the tri-polycrystal SiGe HBT and the preparation method of the strain BiCMOS integrated device based on the tri-polycrystal SiGe HBT provided by the invention, a performance-enhanced strain BiCMOS integrated circuit based on the tri-polycrystal SiGe HBT is prepared in a low temperature process by means of the characteristic that the vertical electronic mobility and the horizontal hole mobility of the strain SiGe material are greater than those of relaxation Si adequately.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a strained BiCMOS integrated device based on triple-polycrystalline SiGeHBT and a preparation method thereof. Background technique [0002] Semiconductor integrated circuits are the foundation of the electronics industry, and people's huge demand for the electronics industry has prompted the rapid development of this field. In the past few decades, the rapid development of the electronics industry has had a huge impact on social development and the national economy; at present, the electronics industry has become the largest industry in the world, occupying a large share in the global market, with output value Already over $1 trillion. [0003] SiCMOS integrated circuits have the advantages of low power consumption, high integration, low noise and high reliability, and occupy a dominant position in the semiconductor integrated circuit indust...

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Problems solved by technology

[0003] SiCMOS integrated circuits have the advantages of low power consumption, high integration, low noise and high reliability, and occupy a dominant position in the semiconductor integrated circuit industry. However, with the further increase in the scale of integrated circuits, the reduction of device feature sizes, The increase in integration and complexity, especially after the feature size of the device enters the nanometer scale, the limitations of the material and physical characteristics of SiCMOS devices have gradually emerged, which limits the further development of Si integrated circuits and their manufacturing processes; although microelectronics Great progress has been made in the research and application of compound semiconductors and other new materials, but they are far from being able to replace silicon-based processes; and according to the development law of science and technology, a new technology has been It generally takes 20 to 30 years to become the main technology

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