Unlock instant, AI-driven research and patent intelligence for your innovation.

Circuit Arrangement Including A Common Source Sense-FET

A technology for circuit layout and measurement circuits, which is applied in the direction of only measuring current, electrical components, electronic switches, etc.

Active Publication Date: 2013-05-08
INFINEON TECH AG
View PDF5 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above, there is a general need for improved current sensing circuit arrangements that (at least in part) solve or alleviate problems that arise when using known sense transistor circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Circuit Arrangement Including A Common Source Sense-FET
  • Circuit Arrangement Including A Common Source Sense-FET
  • Circuit Arrangement Including A Common Source Sense-FET

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0019] figure 1 is a cross-sectional view illustrating (at least in part) two separate field effect transistor (FET) components having a common source electrode but having separate drain electrodes. A plurality of transistor cells are integrated in the semiconductor body 100 . From these transistor cells, at least one transistor cell 101 forms a sense transistor and most transistor cells 102 form a load transistor. In contrast to typical vertical power transistor components, the metallization layer arranged on the top surface 103 of the semiconductor body 100 (ie...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a circuit arrangement including a common source sense-FET. A current sensing circuit arrangement is disclosed. The circuit arrangement includes a load transistor for controlling a load current to a load being coupled to a drain electrode of the load transistor. A sense transistor is coupled to the load transistor. The sense transistor has a drain electrode that provides a measurement current representative of the load current. The load transistor and the sense transistor are field effect transistors having a common source electrode. A measurement circuit is configured to receive the measurement current from the sense transistor and to generate an output signal therefrom, the output signal being representative of the load current.

Description

technical field [0001] The invention relates to the field of current sensing of transistor load currents using so-called sense transistors. Background technique [0002] Current sensing circuits using so-called current sensing transistors (or "sense FETs") have been in common use for many years. These current sensing techniques are particularly useful in measuring the load current of a power field effect transistor (power FET) composed of multiple transistor cells, as described, for example, in US Patent Application Publication No. 2001 / 0020732 A1. These power field effect transistors have a common drain region for all transistor cells making up the power transistor part. The common drain region is connected by one drain electrode arranged on the backside of the wafer, while the source region and the corresponding source electrode are contacted and connected in parallel on the front side of the wafer. The source electrode of one transistor cell (referred to as a "sense cel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/081
CPCH03K2217/0027G01R19/0092H03F2200/261H03F2200/462
Inventor A.迈泽S.蒂勒
Owner INFINEON TECH AG