Unlock instant, AI-driven research and patent intelligence for your innovation.

High voltage semiconductor structure and method of operation

A method of operation, semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as easy latch, internal components with poor protection capabilities, and easy-to-break protection components

Active Publication Date: 2015-09-30
MACRONIX INT CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The components of the high-voltage semiconductor structure are complex, and the protection ability of the protection components is poor when ESD occurs, so that the internal components are easily damaged and the protection components are prone to latch-up effect in normal operation.
Since these conditions cannot be effectively improved for a long time, it has become a major bottleneck in the development of ESD protection technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High voltage semiconductor structure and method of operation
  • High voltage semiconductor structure and method of operation
  • High voltage semiconductor structure and method of operation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] Please refer to figure 1 , which shows a schematic diagram of a high-voltage semiconductor structure 100 in this embodiment. The high-voltage semiconductor structure 100 includes a substrate 110P, multiple N-type material regions 121N, 122N, 123N, multiple P-type material regions 121P, 122P, multiple N-type doping regions (N type doping regions) 131N, 132N, multiple A P type doping region (P type doping region) 131P, 132P, 133P, an N type buried layer (N+buried layer) 140N, a plurality of field oxide layers (Field Oxide, FOX) 150 and two polysilicon layers 160 .

[0034] In this embodiment, the substrate 110P is, for example, a P-type epitaxy (EPI) substrate or a P-type substrate. The N-type material regions 121N...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high voltage semiconductor structure and an operation method thereof. The high voltage semiconductor structure comprises a substrate, a first P type mingling region, a second P type mingling region, a third P type mingling region, a first N type mingling region and a second N type mingling region. The first P type mingling region, the first N type mingling region, the third P type mingling region, the second N type mingling region and the second P type mingling region are sequentially distributed in the substrate to form the PNPNP state. The high voltage semiconductor structure and the operation method utilize the design of the PNPNP state to enable electricity leakage condition and the latch-up condition to be effectively improved.

Description

technical field [0001] The present invention relates to a semiconductor structure and method of operation thereof, and more particularly to a high voltage semiconductor structure and method of operation thereof. Background technique [0002] In the design of semiconductor structures, electrostatic discharge (Electrostatic Discharge, ESD) protection capability is a key consideration in the design. Especially when the operating voltage of high-voltage semiconductor structures is higher than 40 volts (V), the electrostatic discharge protection capability is a very difficult challenge. [0003] In the research related to the electrostatic discharge protection ability, the ESD protection ability and the latch-up effect (Latch-up) are the key factors. The components of the high-voltage semiconductor structure are complex, and the protection ability of the protection components is poor when ESD occurs, so that the internal components are prone to damage and the protection componen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L27/092H01L29/06H01L21/822
Inventor 陈永初童文菁
Owner MACRONIX INT CO LTD