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Resist additive and resist composition containing same

A technology of resists and additives, which is applied in the photolithographic process of patterned surfaces, photosensitive materials for optomechanical equipment, instruments, etc., and can solve problems such as bubbles and watermarks, collapse, and deformation of resist patterns

Active Publication Date: 2015-05-20
SK MATERIALS PERFORMANCE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the resist pattern may be deformed due to swelling or may collapse, or various defects such as air bubbles and watermarks may be generated

Method used

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  • Resist additive and resist composition containing same
  • Resist additive and resist composition containing same
  • Resist additive and resist composition containing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0221] By adding 10 g of 2-methacrylic acid 3-(2,2,2-trifluoro-acetoxy)-adamantan-1-yl ester, 1 g of maleic anhydride and 15 g of 2-methyl-acrylic acid 1- A solution prepared by dissolving isopropylcyclohexyl ester in 255 g of 1,4-dioxane and 1 g of dimethylazobisbutyronitrile (DMAB) as an initiator were charged into the jacketed reactor and stirred. By setting the temperature of the circulator to 65°C, the temperature of the reactor was gradually increased, and the reactor was stirred at 65°C for 8 hours. After the reaction was terminated, the reaction solution was precipitated by adding 3.4 L of n-hexane thereto. The precipitate was filtered and dried in vacuo to obtain Polymer I represented by the following formula. The polystyrene equivalent weight average molecular weight (Mw) of Polymer I was 7500 g / mol.

[0222]

Embodiment 2

[0224] Polymer II represented by the following formula was prepared in the same manner as in Polymer Synthesis Example 1 except that 2-methyl-acrylate 2-isopropyl-adamantan-2-yl ester was used instead of Polymer Synthesis Example 2-Methyl-acrylate 1-isopropyl-cyclohexyl in 1. Polymer II had a polystyrene equivalent Mw of 8000 g / mol.

[0225]

Embodiment 3

[0227] Polymer III represented by the following formula was prepared in the same manner as in Polymer Synthesis Example 1, except that 2-methyl-acrylic acid 1-methyl-cyclohexyl was used instead of 2- 1-Isopropyl-cyclohexyl methacrylate. Polymer III has a polystyrene equivalent weight Mw of 9200 g / mol.

[0228]

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Abstract

The invention discloses a resist additive expressed in a formula 1 and a resist composition containing a same. The resist additive contained in the resist composition improves hydrophobicity of a resist film surface in an exposure process so as to prevent materials from leaching out in water in an immersed photolithography process, and micro resist patterns with excellent sensitiveness and high resolution are formed. In the formula 1, definitions of substituent groups are described as in a specification.

Description

technical field [0001] The present invention relates to a resist additive which improves the hydrophobicity of the surface of a resist film to prevent materials in the resist film from being leached in water during an immersion photolithography process and a resist composition comprising the same , and form resist film micropatterns with excellent sensitivity and high resolution. Background of the invention [0002] Accurate micropatterning of photoresists is required as large scale integration (LSI) has higher integration and higher speed in recent years. As an exposure light source used in forming a resist pattern, g-line (436 nm) or i-line (365 nm) from a mercury lamp has been widely used. [0003] However, since the resolution improvement obtained by adjusting the exposure wavelength approaches a physical limit, methods using shorter wavelengths were introduced as finer photoresist patterning techniques. For example, KrF excimer laser light (248 nm), ArF excimer laser ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/039G03F7/00
CPCG03F7/00G03F7/004G03F7/0045G03F7/039G03F7/0392
Inventor 裵昌完朱炫相申大铉洪容和
Owner SK MATERIALS PERFORMANCE CO LTD