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semiconductor memory device

A storage device and semiconductor technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as consumption and more power

Active Publication Date: 2018-01-02
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, if the transmission line between the memory device and the controller is terminated to the power supply voltage Vdd, transmitting a signal with a low level consumes more power than a signal with a high level

Method used

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Embodiment Construction

[0043] The inventive concept will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown. It should be understood, however, that there is no intent to limit exemplary embodiments of the inventive concepts to the particular forms disclosed, but on the contrary, exemplary embodiments of the inventive concepts cover all modifications, equivalents falling within the spirit and scope of the inventive concepts. items and replacements. The same reference numbers refer to the same elements in the drawings.

[0044] In the drawings, the size of structures may be exaggerated for clarity.

[0045] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments of inventive concepts. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly dictate...

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Abstract

A semiconductor memory device includes: a plurality of memory banks in a first region; a data terminal to which an input data signal is input, the data terminal in a second region; and an inversion circuit responsive to instructing the An inversion control signal of whether the input data signal has been inverted is used to invert or not invert the input data signal, wherein at least one inversion circuit is arranged for each of the plurality of memory banks.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2012-0020397 filed in the Korean Intellectual Property Office on February 28, 2012, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] This inventive concept relates to semiconductor memory devices, and more particularly, to semiconductor memory devices with write data bus inversion. Background technique [0004] Data bus inversion (DBI) has been widely used in order to reduce power consumption using transmission lines. For example, if a transmission line between a memory device and a controller is terminated to a power supply voltage Vdd, transmitting a signal with a low level consumes more power than a signal with a high level. Therefore, in a piece of data to be transmitted, if the number of data pieces with a low level is greater than the number of data pieces with a high level, the data can b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/10
CPCG11C7/1006G11C7/1009G11C7/1045G11C11/1675G11C11/4085G11C11/4096G11C11/4097G11C2211/5647G11C7/10G11C7/22G11C5/02G11C5/06G11C7/1096G11C7/12
Inventor 孙教民
Owner SAMSUNG ELECTRONICS CO LTD