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Method of fabricating a semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices

Active Publication Date: 2013-09-18
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Thus, while conventional photolithographic methods are generally adequate for their intended purpose, they are not completely satisfactory in every respect

Method used

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  • Method of fabricating a semiconductor device
  • Method of fabricating a semiconductor device
  • Method of fabricating a semiconductor device

Examples

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Embodiment Construction

[0027] It is understood that the following disclosure provides many different embodiments, or examples, for implementing different elements of various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. These are of course merely examples and are not intended to be limiting. For example, the following description in which a first element is formed on a second element may include embodiments in which the first element and the second element are formed in direct contact, and may also include embodiments in which additional elements are formed between the first element and the second element Between embodiments such that the first element and the second element are not in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for brevity only and does not in itself dictate a relationship between the various embodiments and / or struc...

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Abstract

The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic layer over the substrate. The organic layer is formed over the plurality of circuit devices. The method includes polishing the organic layer to planarize a surface of the organic layer. The organic layer is free of being thermally treated prior to the polishing. The organic material is un-cross-linked during the polishing. The method includes depositing a LT-film over the planarized surface of the organic layer. The depositing is performed at a temperature less than about 150 degrees Celsius. The depositing is also performed without using a spin coating process. The method includes forming a patterned photoresist layer over the LT-film.

Description

technical field [0001] The present invention relates to methods of manufacturing semiconductor devices. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and producing ICs, and thus, in order to realize these advances, similar developments in IC processing and production are required. In the course of IC development, functional density (ie, the number of interconnected devices per chip area) has increased dramatically while geometry size (ie, the smallest component that can be made using a fabrication process) has decreased. [0003] The reduced geometries lead to challenges in semiconductor fabrication. For example, as geometries continue to shrink and manufacturing process to...

Claims

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Application Information

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IPC IPC(8): H01L21/027
CPCH01L21/0332H01L21/31058H01L21/31144H01L21/76802H01L21/76819H01L21/76837
Inventor 吕奎亮谢铭峰张庆裕
Owner TAIWAN SEMICON MFG CO LTD
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