Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure and manufacturing method thereof

A technology for semiconductor and dielectric structures, applied in the field of semiconductor structures and their manufacturing, can solve the problems of limited reliability and reproducibility of components

Active Publication Date: 2016-05-11
MACRONIX INT CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the general method of forming pinch channels, for example, doping wells with different depths and concentrations are used to form interlaced vertical channels. with limited reproducibility

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The semiconductor structure of the embodiment can be applied to semiconductor elements of different operating voltages, such as metal oxide semiconductor (MOS), especially semiconductor elements under high voltage ( / ultra high voltage) operation, such as high voltage ( / ultra high voltage)-junction field effect Transistor (Junction Field Effect Transistor, JFET). The semiconductor structure of the embodiment has a plurality of channel regions, and both sides of each finger region of the first conductivity type in the first well are sandwiched by channel regions of the second conductivity type in the second well, so as to improve channel pinching Capability, can also reduce the thermal effect (thermal effect) in the manufacturing process of application components, so that the application components have more stable electronic characteristics.

[0039] Figure 1A It is a top view of a semiconductor structure according to an embodiment of the present invention. Figure 1B ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate with a first conductive type, a deep trap with a second conductive type, a first trap with a first conductive type, and a second trap with a second conductive type. The deep trap with a second conductive type is formed in the substrate and is extended downwardly from the surface of the substrate. The first trap with a first conductive type is extended downwardly from the surface of the substrate and is formed in the deep trap. The first trap comprises a block region and multiple finger regions connected with one end of the block region. The second trap with a second conductive type is extended downwardly from the surface of the substrate in the deep trap and is abutted against the first trap. The second trap comprises multiple channel regions. The multiple channel regions and the multiple finger regions are arranged in a staggered manner in order to separate the multiple finger regions.

Description

technical field [0001] The present invention relates to semiconductor structures and methods of fabrication thereof, and more particularly to semiconductor structures operating at high voltages and methods of fabrication thereof. Background technique [0002] In recent decades, the semiconductor industry has continued to shrink the size of semiconductor structures while simultaneously improving speed, performance, density, and unit cost of integrated circuits. For semiconductor devices operating at high voltage or ultra-high voltage, the pinch-off voltage is controlled by the channel width, and the channel length affects the pinch capability. In the general method of forming pinch channels, for example, doping wells with different depths and concentrations are used to form interlaced vertical channels. with limited reproducibility. Therefore, how to improve the electrical reliability of components is actually one of the goals of the industry. Contents of the invention ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/10H01L29/06
Inventor 林镇元林正基詹景琳连士进吴锡垣
Owner MACRONIX INT CO LTD