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Light emitting diode and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied in the directions of electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing the cost of light-emitting diodes, and the cost of light-emitting diodes cannot be effectively reduced.

Inactive Publication Date: 2013-12-25
WALSIN LIHWA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the sake of conductivity, the amount of gold used is increased, resulting in the inability to effectively reduce the cost of traditional light-emitting diodes

Method used

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  • Light emitting diode and manufacturing method thereof
  • Light emitting diode and manufacturing method thereof
  • Light emitting diode and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0027] Please refer to figure 1 , Which shows a cross-sectional view of a light emitting diode 100 according to an embodiment of the invention. The light emitting diode 100 includes a substrate 110, a semiconductor composite layer 120, a first electrode 130, a second electrode 140, a coating layer 150 and a pad layer 160.

[0028] The substrate 110 is, for example, a silicon substrate, a gallium nitride substrate, a silicon carbide substrate, a sapphire substrate, or a substrate processed by patterning the above-mentioned substrate, but it is not limited thereto.

[0029] The semiconductor composite layer 120 is located on the substrate 110 to provide holes and electrons and combine the holes and electrons to release light. In detail, the semiconductor composite layer 120 is formed by stacking multiple semiconductor layers up and down, which includes a first semiconductor layer 121 located on the substrate 110; a light emitting layer 122 located on the first semiconductor layer 121...

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Abstract

A light emitting diode (LED) and a manufacturing method thereof are provided. The LED comprises a semiconductor composite layer and an electrode. The semiconductor composite layer provides holes and electrons and allows the holes and the electrons to be combined to emit light. The electrode is formed on the semiconductor composite layer, wherein the electrode contains 30%-98% of aluminum.

Description

Technical field [0001] The present invention relates to a light-emitting diode and a manufacturing method thereof, and more particularly to a light-emitting diode having an electrode with high aluminum content and a manufacturing method thereof. Background technique [0002] With the development of science and technology, various lighting technologies continue to innovate. Light-emitting diodes are an important milestone in the development of lighting technology. Light-emitting diodes have the advantages of high efficiency, long life, and resistance to damage, which makes the light-emitting diodes widely used in various electronic devices and lamps. [0003] A conventional light emitting diode includes a P-type semiconductor layer, an N-type semiconductor layer, and two electrodes. The two electrodes are formed on the P-type semiconductor layer and the N-type semiconductor layer, respectively. Generally speaking, in order to prevent the aluminum material of the electrode from bei...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/40H01L33/00
CPCH01L33/40H01L33/52
Inventor 孙谢阳
Owner WALSIN LIHWA