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Reactors for Vapor Deposition

A vapor deposition and reactor technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of the durability of the carrier affecting the cost and the quality of the film.

Active Publication Date: 2017-07-28
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the durability of the carrier will also affect the cost of production
Since the surface of the carrier on which the substrate is placed will be damaged during use, which will affect the quality of the film, it must be solved by replacing the carrier

Method used

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  • Reactors for Vapor Deposition
  • Reactors for Vapor Deposition
  • Reactors for Vapor Deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention discloses a reactor 200, which includes a carrier and a heating device. like image 3 As shown, the carrier has a surface 240 including a plurality of grooves 242 for carrying the substrate 22, a first carrier 28 and a second carrier 24 located on the first carrier 28, wherein the second carrier The thermal conductivity of 24 is greater than that of first carrier 28 . The carrier gas mixed with the saturated vapor of the reaction source material is passed into the reactor 200, and the heater 26 also heats the carrier. When the temperature reaches a predetermined temperature, the gas atoms begin to deposit on the substrate 22 and form a thin film. In one embodiment, the reactor 200 is used for vapor deposition, wherein the vapor deposition may be metal organic chemical vapor deposition (MOCVD). In one embodiment, the heater 26 is an electromagnetic wave heating device, which includes an electromagnetic wave generating element that can emit electro...

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PUM

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Abstract

The invention discloses a reactor used in vapor deposition, which includes a carrier and a heating device for heating the carrier; the carrier includes a first carrier and a second carrier formed on the first carrier, wherein the first carrier The electromagnetic wave heating coefficient of the carrier is greater than the electromagnetic wave heating coefficient of the second carrier.

Description

technical field [0001] The invention relates to a reactor applied to vapor deposition, comprising a heating device and a carrier, and the carrier further comprises a second carrier and a first carrier whose electromagnetic wave heating coefficient is greater than that of the second carrier. Background technique [0002] In the industrial manufacturing process, thin films need to be formed on the surfaces of various products for various application requirements, for example, by evaporation. Since the principle of evaporation is to form a film of various materials on the surface of the product in the size of atoms or molecules, films with different thicknesses and compositions can be formed by controlling the reaction time, temperature and gas flow. Evaporation is also commonly used in various industrial and daily necessities production processing applications, such as the electronic industry with high precision and small size. [0003] According to the mechanism of material ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/458C23C16/46
CPCC23C16/45597C23C16/4585C23C16/4586C23C16/46
Inventor 欧震王韦涵翁健忠
Owner EPISTAR CORP