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Programming method of non-volatile memory device

A technology of non-volatile storage and programming method, applied in static memory, read-only memory, information storage, etc., can solve problems such as the inability to maintain the level of boost

Active Publication Date: 2018-07-10
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, since the boosted degree of the channel voltage of the memory cells connected to the word line WLn in the unselected strings cannot be maintained, the corresponding memory cells may be programmed.

Method used

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  • Programming method of non-volatile memory device
  • Programming method of non-volatile memory device
  • Programming method of non-volatile memory device

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Embodiment Construction

[0024] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. However, this invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Throughout the specification, like reference numerals refer to like parts in the different drawings and exemplary embodiments of the invention.

[0025] Figure 2A is a circuit diagram illustrating a nonvolatile memory device according to an exemplary embodiment. Figure 2B yes Figure 2A A cross-sectional view of a string of .

[0026] see Figure 2A and Figure 2B , an exemplary nonvolatile memory device includes a plurality of storage strings ST0 to ST1, each of which includes a source selection transistor SST, a plurality of memory...

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Abstract

The present invention provides a method for programming a non-volatile memory device, the non-volatile memory device includes a plurality of memory strings, each memory string includes a source connected in series between a common source line and a bit line A select transistor, a plurality of memory cells, and a drain select transistor. The programming method includes the steps of: applying a first voltage to a common source line during a first period of floating channels of a plurality of memory cells of an unselected string; and programming the selected memory cells During the second period of , when the selected word line belongs to the word line group adjacent to the common source line, the second voltage increased more than the first voltage is applied to the common source line.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0095673 filed on Aug. 30, 2012, the entire contents of which are hereby incorporated by reference. technical field [0003] Exemplary embodiments of the present invention relate to a method of operating a nonvolatile memory device, and more particularly, to a method of programming a nonvolatile memory device. Background technique [0004] Recently, there has been a rapid increase in demand for nonvolatile memory devices capable of electrically programming and erasing and retaining data even in a state where power is not supplied. Among nonvolatile memory devices, a NAND flash memory device includes a plurality of memory cells connected in series such that adjacent cells share a drain or a source, and form one string. Therefore, NAND flash memory devices are suitable for storing large amounts of information. [0005] Specifically, a string for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/24
CPCG11C16/0483G11C16/10G11C16/12
Inventor 金泰均
Owner SK HYNIX INC