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Faceted FINFET

A technology of small planes and fins, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as reduced gate control capabilities

Active Publication Date: 2014-07-09
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Consequently, the ability of the gate of a semiconductor device affected by the short channel effect to control the channel is reduced, that is, the ability of the gate to control the on and / or off state of the semiconductor device is inhibited, among other things.

Method used

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  • Faceted FINFET
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Examples

Experimental program
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Embodiment Construction

[0038] The claimed subject matter is now described with reference to the drawings, wherein like reference numerals are generally used to refer to like elements throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide an understanding of claimed subject matter. It may be evident, however, that claimed subject matter may be practiced without these specific details. In other instances, structures and devices are shown in block diagram form in order to facilitate describing the claimed subject matter.

[0039] figure 1 An example of a semiconductor device 100 according to some embodiments is shown. In an example, the semiconductor device 100 includes a fin field effect transistor (finFET) device. The semiconductor device 100 is formed on a semiconductor substrate, such as a silicon (Si) substrate, and thus includes at least some of the semiconductor substrate 102 in some embodiments. The semiconductor devi...

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PUM

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Abstract

Among other things, a semiconductor device comprising one or more faceted surfaces and techniques for forming the semiconductor device are provided. A semiconductor device, such as a finFET, comprises a fin formed on a semiconductor substrate. The fin comprises a source region, a channel, and a drain region. A gate is formed around the channel. A top fin portion of the fin is annealed, such as by a hydrogen annealing process, to create one or more faceted surfaces. For example the top fin portion comprises a first faceted surface formed adjacent to a second faceted surface at an angle greater than 90 degrees relative to the second faceted surface, which results in a reduced sharpness of a corner between the first faceted surface and the second faceted surface. In this way, an electrical field near the corner is substantially uniform to electrical fields induced elsewhere within the fin. The present invention also discloses a faceted FINFET.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, to a faceted fin field effect transistor. Background technique [0002] To achieve increased circuit density of integrated circuits, semiconductor devices such as field effect transistors in these integrated circuits are thus reduced in size. However, reducing the size of a semiconductor device results in a reduction in the channel length of the semiconductor device. Reducing the channel length results in the source and drain regions of the semiconductor device being brought closer to each other, which causes the source and drain regions to exert an undue influence on the channel, more precisely what is commonly referred to as Overloading in the channel as a short channel effect. Consequently, the ability of the gate of a semiconductor device affected by the short channel effect to control the channel is reduced, ie, the ability of the gate to control the o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/7853H01L21/3247H01L21/76224H01L29/66795
Inventor 马克·范·达尔乔治斯·威廉提斯
Owner TAIWAN SEMICON MFG CO LTD