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Thin-film transistor and display device having the same

A technology of thin-film transistors and oxide semiconductors, applied in transistors, electric solid-state devices, semiconductor devices, etc., can solve problems such as degradation of equipment characteristics

Inactive Publication Date: 2014-07-23
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, if Cu is used for wiring, the device characteristics will degrade due to the diffusion of Cu

Method used

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  • Thin-film transistor and display device having the same
  • Thin-film transistor and display device having the same
  • Thin-film transistor and display device having the same

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Embodiment Construction

[0020] The aspects and features of the present invention and methods for achieving the aspects and features will become apparent by referring to the embodiments described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed hereinafter, but can be implemented in various forms. The contents defined in the description, such as specific structures and elements, are only used to help those skilled in the art fully understand the present invention, and the present invention is only limited within the scope of the appended claims.

[0021] The term "on" used to indicate that an element is on another element or on a different layer or layer includes both the case where an element is directly on another element or layer and the case where an element is on another layer or through another element. The case above a component. In the general description of the invention, the same reference numerals are used for...

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Abstract

A thin-film transistor includes a substrate, a gate electrode formed over the substrate, a gate insulating layer formed over the gate electrode and the substrate, an oxide semiconductor layer formed over the gate insulating layer and comprising a source section and a drain section, a first electrode formed over the substrate and electrically connected to the source section, and a second electrode formed over the substrate and electrically connected to the drain section. The thin-film transistor further includes a first barrier layer disposed between the oxide semiconductor layer and the first electrode, a second barrier layer disposed between the first barrier layer and the first electrode, and the first electrode being electrically connected to the oxide semiconductor layer via the first barrier layer and the second barrier layer.

Description

technical field [0001] The present disclosure relates to a thin film transistor and a display device having the thin film transistor, and more particularly, to a thin film transistor including an oxide semiconductor and a display device having the thin film transistor. Background technique [0002] A thin film transistor includes a semiconductor layer that provides a channel region, a source region, and a drain region. In addition, the semiconductor layer also provides a gate electrode, a source electrode, and a drain electrode, wherein the gate electrode overlaps with the channel region and is insulated from the semiconductor layer by the gate insulating layer, and the drain electrode is connected to the drain region and the source region of the semiconductor layer . [0003] The thin film transistor constructed as described above is suitable not only for semiconductor integrated circuits but also for display devices such as liquid crystal displays (LCD) and active matrix ...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/45H01L27/32
CPCH01L27/1225H01L29/45H01L29/78606H01L29/7869H01L27/1218H10K2102/351
Inventor 金在植
Owner SAMSUNG DISPLAY CO LTD