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Film forming device

A film forming device and mounting technology, applied in coating, gaseous chemical plating, discharge tube, etc., can solve problems such as low output

Active Publication Date: 2017-03-15
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As described above, in a single-wafer type film forming apparatus, the supply of the precursor gas, the supply of the purge gas, the generation of the plasma of the reaction gas, and the supply of the purge gas need to be performed sequentially in time, so the throughput is relatively low.

Method used

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  • Film forming device
  • Film forming device
  • Film forming device

Examples

Experimental program
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Embodiment Construction

[0037] Hereinafter, various embodiments will be described in detail with reference to the drawings. However, in each drawing, the same or similar parts are given the same reference numerals.

[0038] figure 1 It is a cross-sectional view showing a film forming apparatus according to an embodiment. figure 2 It is a plan view schematically showing a film forming apparatus according to an embodiment. figure 1 Means edge figure 2 Section of the I-I line. image 3 Is from figure 2 The illustrated film forming apparatus is a plan view of the state where the upper part of the processing container is removed. figure 1 , figure 2 as well as image 3 The illustrated film forming apparatus 10 includes a processing container 12, a mounting table 14, a first gas supply unit 16, an exhaust unit 18, a second gas supply unit 20, and a plasma generation unit 22.

[0039] The processing container 12 is a substantially cylindrical container extending in the axis X direction. A processing chamber ...

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PUM

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Abstract

In the film forming apparatus according to one embodiment, the stage is provided so as to be rotatable about an axis. The processing chamber for accommodating the stage includes a first area and a second area. Accompanying the rotation of the stage, the substrate mounting area of ​​the stage moves in the circumferential direction with respect to the axis, and sequentially passes through the first area and the second area. The first gas supply unit supplies the precursor gas to the first region from the injection unit provided to face the mounting table. The exhaust unit exhausts air from an exhaust port formed to extend along a closed circuit surrounding the injection unit. The second gas supply unit supplies purge gas from an injection port formed to extend along a closed circuit surrounding the exhaust port. The plasma generation unit generates plasma of the reaction gas in the second region. In this film forming apparatus, an angular range in which the second region extends in the circumferential direction with respect to the axis is larger than an angular range in which the first region extends in the circumferential direction with respect to the axis.

Description

Technical field [0001] The embodiment of the present invention relates to a film forming apparatus. Background technique [0002] As a method of forming a film on a substrate, a plasma enhanced atomic layer deposition (PE-ALD: Plasma Enhanced Atomic Layer Deposition) method is known. In the PE-ALD method, by exposing the substrate to the precursor gas, the precursor gas containing the constituent elements of the thin film to be formed is chemically adsorbed on the substrate. Next, by exposing the substrate to the purge gas, the precursor gas that is excessively chemically adsorbed on the substrate is removed. Then, by exposing the substrate to plasma of a reactive gas containing constituent elements of the thin film to be formed, a desired thin film is formed on the substrate. In the PE-ALD method, by repeating such a process, a processed film containing atoms or molecules of the precursor gas is formed on the substrate. [0003] As an apparatus for implementing the above-mentio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31C23C16/455
CPCC23C16/45542C23C16/45548H01J37/3244H01J37/32834H01L21/0217H01L21/02274H01L21/0228C23C16/50
Inventor 岩崎征英米仓総史岩尾俊彦
Owner TOKYO ELECTRON LTD