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A kind of preparation method of metal nano-interdigital grating

A metal nano-interdigital technology, which is applied in the field of metal nano-interdigital grating preparation, can solve the problems of metal melting, narrow single-line scale, difficulty in ensuring grating lines, etc., and achieve the effect of changing the structural period and high processing precision

Active Publication Date: 2016-08-17
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The difficulty in processing this kind of metal nano-interdigitated grating structure lies in its high structural density and narrow and long single-line scale. Therefore, the processing technology must ensure that the adjacent metal lines of the grating cannot be connected, otherwise the grating will become a resistor and cannot be connected to adjacent metal lines. An alternating electric field is generated between the lines
It is difficult to ensure that all adjacent grating lines are not connected if electron beam exposure is first used, then thermal evaporation deposits metal, and then the common lift-off method is used.
Because the structure unit of the metal grating of the present invention is tens of nanometers, it is difficult to completely melt off the redundant metal between the grating lines, and it is very easy to cause the adhesion of adjacent metal lines, so this method is not suitable for processing this nanoscale device

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  • A kind of preparation method of metal nano-interdigital grating
  • A kind of preparation method of metal nano-interdigital grating
  • A kind of preparation method of metal nano-interdigital grating

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Embodiment approach 1

[0029] Such as figure 1 As shown, a method for preparing a metal nano-interdigital grating provided in this embodiment includes the following steps:

[0030] Step A: On the cleaned substrate, a metal film of a certain thickness is grown using a coating device;

[0031] Step B: Spin-coat photoresist on the metal film, and prepare an interdigitated grating on the photoresist by electron beam lithography;

[0032] Step C: transferring the interdigitated grating to the metal film by ion beam etching;

[0033] Step D: wash away the residual glue on the metal film and the interdigital grating in hot acetone solution, and then use a microwave plasma remover to remove the residual organic matter.

[0034] In step A, the preparation of the substrate substrate is not limited, and may be quartz, silicon and other equivalent materials. Preferably, the substrate substrate is quartz or silicon.

[0035] In the cleaning process of the substrate substrate, the substrate substrate is cleane...

Embodiment approach 2

[0051] In this embodiment, a nano-gold interdigital grating on a silicon substrate is prepared. The period of the prepared interdigital grating is 200nm, the line width is about 80nm, and the slit width is about 120nm. Concrete preparation process is as follows:

[0052] 1) Take the cut silicon wafer and wash it with acetone, alcohol, and deionized water for 5 minutes each, then blow dry with a nitrogen gun, and bake on a hot plate at 180°C for 5 minutes.

[0053] 2) Use a thermal evaporation vacuum coating machine to grow 10nm Cr and 50nm Au on the cleaned silicon wafer, and the vacuum degree is 3.0×10 -4 Pa.

[0054] 3) Put the sample on the gluing platform and spin-coat PMMA, the rotation speed is 4000rpm, and the film thickness is about 210nm.

[0055] 4) Prepare an interdigitated grating on PMMA by electron beam lithography, select an appropriate exposure dose, the relative dose parameter is 2.0, develop for 40 seconds, and fix for 30 seconds.

[0056] 5) Transfer the...

Embodiment approach 3

[0059] Such as Figure 4 Shown is the preparation of nano-gold interdigital gratings on a quartz substrate in this embodiment. The period of the prepared interdigital grating is 200nm, the line width is about 80nm, and the slit width is about 120nm. Concrete preparation process is as follows:

[0060] 1) Take the cut quartz slices and wash them with acetone, alcohol, and deionized water for 5 minutes each, then dry them with a nitrogen gun, and bake them on a hot plate at 180°C for 5 minutes.

[0061] 2) Use a thermal evaporation vacuum coating machine to grow 5nm Cr and 30nm Au on the cleaned quartz sheet, and the vacuum degree is 3.0×10 -4 Pa.

[0062] 3) Put the sample on the gluing platform and spin-coat PMMA, the rotation speed is 4000rpm, and the film thickness is about 210nm.

[0063] 4) Prepare an interdigitated grating on PMMA by electron beam lithography, select an appropriate exposure dose, the relative dose parameter is 2.0, develop for 40 seconds, and fix for ...

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Abstract

The invention discloses a method for preparing a metal nano-interdigital grating, which comprises the following steps: step A: growing a metal film with a certain thickness on the cleaned substrate substrate; step B: coating the metal film Spin-coat photoresist, and prepare interdigitated grating on the photoresist by electron beam lithography; step C: transfer the interdigitated grating to the metal film by ion beam lithography; step D: in hot acetone solution Wash away the residual glue on the metal film and the interdigital grating, and then use the microwave plasma glue remover to remove the residual organic matter. The above preparation method adopts electron beam lithography and ion beam etching technology, which can realize nanometer-sized structure processing, precisely control the structural period of the interdigitated metal grating, and effectively change the structural period, slit width and line width of the grating; and The interdigital grating prepared by the method has two functions of the nano electrode and the nano grating.

Description

technical field [0001] The invention relates to the technical field of preparation of interdigital gratings, in particular to a preparation method of metal nanometer interdigital gratings. Background technique [0002] Both the metal grating structure and the metal interdigitated electrode structure are common structures in the field of micro-nano optics and electronics, and they are also two independent basic unit structures in optoelectronic devices, which play different functions and roles. At present, there are many reports on the application of metal gratings or metal interdigitated electrodes, but there are no structural designs and related reports that combine the two different functions of metal gratings and interdigitated electrodes to achieve new optoelectronic properties. The invention designs a metal nano-interdigital grating structure, which simultaneously has two functions of a metal nano-grating and a nano-electrode. Using an external electric field to regula...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/18G03F7/00
Inventor 李俊杰孙伟杰李林全保刚夏晓翔顾长志
Owner INST OF PHYSICS - CHINESE ACAD OF SCI