Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate and a stacked structure. The stacked structure is vertically formed on the substrate. The laminated structure includes a plurality of conductive layers and a plurality of insulating layers, and the conductive layers and the insulating layers are interlaced. At least one of the conductive layers has a first doping section and a second doping section, the first doping section has a first doping property, and the second doping section has a second doping property. The doping characteristics, the first doping characteristics and the second doping characteristics are different, and the adjacent surface of the first doping section and the second doping section has a grain boundary.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, and in particular to a semiconductor device with a doped region and its manufacturing method. Background technique [0002] With the development of semiconductor technology, various semiconductor components are constantly being introduced. For example, components such as memories, transistors, and diodes have been widely used in various electronic devices. [0003] For the doped region in the semiconductor device, the conventional way is to manufacture it through implantation process. However, when the doping depth is deeper, the doping area distribution is larger, and the doping concentration per unit volume is lighter. In addition, when the doped region diffuses and the distribution of the doped region becomes larger, the accuracy of defining the doped region will decrease, thereby affecting the accuracy of the overall process. Furthermore, in order to achieve a ...

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Problems solved by technology

However, when the doping depth is deeper, the doping area distribution is larger, and the doping concentration per unit volume is lighter.

In addition, when the doped region diffuses and the distribution of the doped region becomes larger, the accuracy of defining the doped region will decrease, which will affect the accuracy of the overall process.

Furthermore, in order to achieve the predetermined doping concentration, the deeper the region may have to perform more implantation steps, and the implantation concentration used in different depth regions must also be different, thus greatly increasing the manufacturing cost

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