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C-band space power synthesis solid-state power amplifier

A technology of solid-state power and power amplifying unit, which is applied in the fields of satellite communication, microwave communication and scattering communication. It can solve the problems of low output power, low synthesis efficiency, and large loss in planar synthesis, so as to achieve high power output, improve reliability, Effect of increasing power combining efficiency

Active Publication Date: 2015-03-25
NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a C-band spatial power synthesis solid-state power amplifier, which solves the shortcomings of low output power of a single power device, large loss and low synthesis efficiency in the prior art.

Method used

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  • C-band space power synthesis solid-state power amplifier
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  • C-band space power synthesis solid-state power amplifier

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Embodiment Construction

[0016] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0017] Such as figure 1 As shown, a C-band spatial power combining solid-state power amplifier of the present invention is composed of an upper chamber 1 , an H-shaped intermediate pressure block 2 and a lower chamber 3 . The upper cavity 1, the H-shaped intermediate pressure block 2 and the lower cavity 3 are positioned with pins to ensure the installation accuracy, and fixed with screws. In an actual application environment, heat sinks are installed on the outer surfaces of the upper cavity 1 and the lower cavity 3 for heat dissipation of the power amplifier.

[0018] figure 2 Shown is the internal structure diagram of the upper cavity of the power amplifier of the present invention, and the lower cavity has the same structure. The upper chamber of the present invention consists of a microstrip printed board 4, first to second p...

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Abstract

The invention discloses a C-band space power synthesis solid-state power amplifier and relates to the field of satellites and microwave communication. The C-band space power synthesis solid-state power amplifier is composed of an upper cavity, an H-shaped middle press block and a lower cavity, wherein the upper cavity and the lower cavity are vertically symmetrically arranged and are of the same structure. The upper cavity is provided with an upper substrate, the upper substrate is composed of a microstrip printed board, two power amplification units, four microstrip separators, four separator press blocks, two power amplification unit press blocks and four feedthru capacitors, wherein the upper substrate is of an axisymmetric structure relative to the connecting line of the two power amplification units. The C-band space power synthesis solid-state power amplifier adopts a space power synthesis technology, an input / output interface adopts a waveguide form, the inside is of a waveguide microstrip conversion structure, and a signal transmitted in the waveguide is converted to a microstrip line, is amplified and then is radiated to the waveguide through a micro strip to waveguide structure. The structural form reduces transmission loss, increases synthesis efficiency, reduces the size and lowers thermal design difficulty.

Description

technical field [0001] The invention relates to the fields of satellite communication, microwave communication and scattering communication, in particular to a solid-state power amplifier using space power synthesis technology, which can be widely used in communication systems such as satellite communication and microwave communication. Background technique [0002] In recent years, with the rapid development of wireless communication technology, the requirements for the bandwidth, efficiency and output power of the power amplifier are also increasing day by day. However, solid-state power devices are limited by the physical characteristics of their own semiconductors and processing technology, heat dissipation, impedance matching and other issues. The output power of the device is very limited, and the higher the operating frequency, the lower the output power level of a single chip. Therefore, a plurality of solid-state power devices are used for power synthesis to effecti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/20
CPCH03F3/20
Inventor 李楠杨作成张志忠王晓龙张静朱秀敏王晓明杨贺代刚
Owner NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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