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Realization method of frame transfer ccd with charge dumping function as short as zero exposure time

A technology of exposure time and implementation method, which is applied in the field of photoelectric detection, can solve the problems of residual charge and the inability to guarantee complete removal of charges, etc.

Inactive Publication Date: 2017-10-31
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the experimental results of the previous patent have shown that one charge dumping cannot guarantee the complete removal of the charge in the storage area, and a considerable part will remain in the image read out in the next frame.

Method used

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  • Realization method of frame transfer ccd with charge dumping function as short as zero exposure time
  • Realization method of frame transfer ccd with charge dumping function as short as zero exposure time

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Experimental program
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Embodiment

[0031] The frame transfer CCD47-20 of e2v company has 1027 lines of pixels in the imaging area and 1033 lines of pixels in the storage area. The drive timing control flow to achieve zero exposure time is as follows:

[0032] 1. Control frame transfer clock signal and Continuous vertical transfer of 2×(1027+1033)=4120 lines, at the same time, set the charge dumping gate control signal DG high, open the charge dumping channel, and useless charges accumulated in the imaging area for a long time during the last frame of image readout are quickly Transfer down, through the storage area, the horizontal readout register, and finally into the charge dumping channel for complete recombination.

[0033] 2. At this time, images with zero exposure time are stored in the imaging area and storage area. If the required exposure time is zero, go to step 5; otherwise, go to step 3;

[0034] 3. For the specified time of idle exposure, all clock control signals remain at the default level, ...

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PUM

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Abstract

The invention relates to a method for realizing a frame transfer CCD with a charge dumping function with a short exposure time to zero. The specific steps are: reset the frame transfer, and continuously "frame transfer-charge dumping" for more than four times; if the required exposure time is not zero , go to the next step; otherwise skip the execution of the next two steps; idle exposure; read frame transfer; clear the horizontal read register; read a frame of image. The present invention advances the timing of charge dumping to be carried out simultaneously with reset and frame transfer, and completes the emptying / resetting of all charge storage units of the entire CCD at the same time in one working state, perfectly realizing the function of the electronic shutter and making the frame transfer CCD The adjustment of the exposure time is no longer subject to any restrictions, it can be as short as zero, and the adjustment accuracy is only limited by the master clock cycle used by the driving timing design.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a method for realizing a frame-transfer CCD with a charge dumping function whose exposure time is as short as zero. Background technique [0002] In the ultraviolet / extreme ultraviolet band, due to the very large dynamic range of the signal, in addition to requiring the CCD to have a large full-well charge and the readout noise to be as small as possible, it is also required that the CCD can achieve millisecond-level exposure time to increase the sensitivity to strong light signals. detection range. In addition, from the perspective of system calibration, the dark signal image with zero exposure time represents the system bias, and the light signal image with zero exposure time can be used to extract the Smear signal with high signal-to-noise ratio. It can be seen that the current application has put forward the requirement that the exposure time be a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/372H04N5/351H04N5/341
Inventor 马庆军宋克非韩振伟
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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