Optical fiber trigger type high-voltage solid-state switch

Abstract

The invention discloses an optical fiber trigger type high-voltage solid-state switch. The optical fiber trigger type high-voltage solid-state switch comprises a high-voltage direct-current power source, an FPGA control system, an optical fiber driving signal transmission part, an optical fiber fault signal transmission part, an IGBT series circuit, a plurality of IGBT driving modules and a plurality of IGBT voltage-sharing circuits; the optical fiber driving signal transmission part comprises a first optical fiber transmission module and a first optical fiber receiving module, the optical fiber fault signal transmission part comprises a second optical fiber transmission module and a second optical fiber receiving module, a plurality of series IGBT switches are arranged in the IGBT series circuit, and the number of the IGBT driving modules is the same as the number of the IGBT switches; the positive pole of the high-voltage direct-current power source is connected with the collector of the first IGBT switch in the IGBT series circuit through a load, and the negative pole of the high-voltage direct-current power source is connected with the emitter of the final IGBT switch in the IGBT series circuit. The optical fiber trigger type high-voltage solid-state switch is high in integration level, small in circuit board size and low in cost, effective electric isolation is provided, and the optical fiber trigger type high-voltage solid-state switch has the overcurrent and short circuit protection function and is flexible and convenient to use.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to an optical fiber triggered high-voltage solid-state switch. Background technique [0002] Solid-state switches with high voltage and high current resistance have great application space not only in high voltage but also in food non-heating, medical equipment, military radar, material processing and other fields. The semiconductor power switching device IGBT is a composite full-control power semiconductor device. Its input control is extremely MOSFET, and its output is extremely GTR. Therefore, it has the characteristics of fast switching speed of MOSFET and simple driving mode, and also has the characteristics of high withstand voltage and current carrying capacity of GTR. The advantages of strong ability. However, in the case of high power and high voltage, it is still difficult for a single IGBT to be used as a high-voltage solid-state switch to meet the requirements...

AI Technical Summary

Problems solved by technology

The former mainly realizes the closed-loop control of each IGBT drive signal through a monitoring circuit with nanosecond response speed, which has high control precision and complex circuit structure.

The latter mainly realizes the static and dynamic voltage equalization of the IGBT by connecting a certain buffer circuit in parallel at the IGBT power end. The structure is simple but the reliability is poor.

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