Chemical mechanical polishing liquid and polishing method

Abstract

The invention relates to application of a chemical mechanical polishing liquid in increasing polishing rate of silicon dioxide. The chemical mechanical polishing liquid contains abrasive particles, an organic compound containing silicon, electrolyte ions with ionic strength greater than or equal to 0.1mol / Kg, and acid. The organic compound containing silicon has the following formula, wherein R is a non-hydrolyzable substituent, D is an organic functional group connected to R, and can react with organic substances for combination, A and B are same or different hydrolyzable substituents or hydroxyl, and C is a hydrolyzable group or hydroxyl, or a non-hydrolyzable alkyl substituent.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid and a polishing method. Background technique [0002] With the continuous development of semiconductor technology and the continuous increase of interconnection layers in large-scale integrated circuits, the planarization technology of conductive layers and insulating dielectric layers has become particularly critical. In the 1980s, the chemical mechanical polishing (CMP) technology pioneered by IBM is considered to be the most effective method for global planarization. [0003] Chemical Mechanical Polishing (CMP) consists of chemical action, mechanical action, and a combination of both. It usually consists of a grinding table with a polishing pad, and a grinding head for carrying chips. The grinding head holds the chip and presses the front side of the chip against the polishing pad. When chemical mechanical polishing is performed, the grinding head moves linearly on the polishing pad ...

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Problems solved by technology

And U.S. Patent 60142706 and U.S. Patent 09609882 did not find that silane coupling agent can improve the polishing speed of silicon dioxide, and did not find

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