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System and method for improving wafer etch non-uniformity

A technology for processing systems and coils, applied in discharge tubes, electrical components, circuits, etc., to solve problems such as difficulty in achieving perfect symmetry

Active Publication Date: 2019-03-19
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, perfect symmetry is very difficult to achieve due to the voltage nodes within the coil and the asymmetrical surrounding hardware

Method used

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  • System and method for improving wafer etch non-uniformity
  • System and method for improving wafer etch non-uniformity
  • System and method for improving wafer etch non-uniformity

Examples

Experimental program
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Embodiment Construction

[0033] now refer to figure 1 , illustrates one embodiment of a substrate processing system 10 according to the present disclosure. The substrate processing system 10 includes an RF source 12 connected to a transformer coupled capacitor tuning (TCCT) circuit 14 connected to a TCP coil 16 . TCCT circuit 14 typically includes one or more fixed or variable capacitors 15 . One embodiment of the TCCT circuit 14 is shown and described in commonly assigned US Publication No. 2013 / 0135058 to Long et al., which is incorporated by reference in its entirety. The TCP coils 16 may include pairs of coils or inner and outer coil pairs.

[0034] A gas plenum 20 having N flux-attenuating sections is arranged between the TCP coil 16 and the dielectric window 24 . As will be described below, the flux attenuation section on the gas plenum 20 extends between selected portions of the TCP coil 16 and the dielectric window 24, and is absent from other portions of the TCP coil 16 and the dielectric ...

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PUM

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Abstract

The present invention relates to systems and methods for improving wafer etch non-uniformity. A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is disposed outside the chamber adjacent to the dielectric window. A radio frequency (RF) source supplies an RF signal to the coil to generate a radio frequency plasma within the processing chamber. N flux-attenuating sections are arranged in a spaced pattern adjacent to the coil, where N is an integer greater than one.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application No. 61 / 941,778, filed February 19, 2014. The entire disclosure of the aforementioned application is incorporated herein by reference. technical field [0003] The present invention relates to substrate processing systems, and more particularly to substrate processing systems and methods for etching substrates using transformer coupled plasmas. Background technique [0004] The background description provided herein is for the purpose of generally describing the context of the disclosure. The work of the presently named inventors, to the extent described in this Background section, and aspects of the specification that were not prior art at the time of filing, are neither expressly nor impliedly admitted as prior art with respect to the present disclosure. have technology. [0005] Substrate processing systems are commonly used to deposit and etch thin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306
CPCH01J37/32119H01J37/321H01J37/3211H01J37/3244H01L21/67069H01J2237/334H01L21/3065
Inventor 汤姆·坎普亚瑟·萨托亚历克斯·帕特森
Owner LAM RES CORP