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Semiconductor device and manufacturing method thereof

A technology of semiconductors and devices, which is applied in the field of semiconductor devices and their manufacturing, and can solve problems such as the reduction of cut-off frequency

Inactive Publication Date: 2018-07-20
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cutoff frequency of RF devices may be lowered due to the parasitic capacitance between the gate and the low-concentration impurity diffusion region

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0034] Specific embodiments will be described in more detail below with reference to the drawings. However, the invention as claimed may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the claimed invention to those skilled in the art.

[0035] It will also be appreciated that when a layer, film, region or panel is referred to as being "on" another, it can be directly on the other, or one or more intervening layers, films, regions may also be present. or plate. Unlike this, it will also be appreciated that when a layer, film, region or panel is referred to as being "directly on" another, it is directly on the other without one or more intervening layers, film, area or plate. Also, although terms like first, second and third are used in various embodiments of the claimed invention to descri...

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PUM

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. A semiconductor device includes a substrate and MOS transistors formed on the substrate. The MOS transistor includes a first gate insulating layer formed on a substrate, a second gate insulating layer formed on one side of the first gate insulating layer and having a thickness greater than that of the first gate insulating layer, and a second gate insulating layer formed on one side of the first gate insulating layer. layer and a gate electrode formed on the second gate insulating layer, a source region adjacent to the first gate insulating layer, and a drain region adjacent to the second gate insulating layer.

Description

Background technique [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a semiconductor device including a MOS transistor and a manufacturing method thereof. [0002] Generally, semiconductor devices such as radio frequency (RF) devices may include MOS transistors. [0003] MOS transistors may have a lightly doped drain (LDD) structure to improve the short channel effect caused by channel length reduction. Further, the MOS transistor may have a double diffused drain (DDD) structure to prevent the breakdown phenomenon caused by the LDD structure, and to increase the breakdown voltage. [0004] When the radio frequency device includes a MOS transistor having a DDD structure, the breakdown voltage of the radio frequency device can be improved. However, the cutoff frequency of radio frequency devices may be lowered due to the parasitic capacitance between the gate and the low-concentration impurity diffusi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/088H01L29/78H01L29/423H01L21/8234H01L21/336
CPCH01L21/02238H01L21/02255H01L21/26506H01L21/28211H01L21/2822H01L21/28238H01L21/823418H01L21/823462H01L27/088H01L29/42368H01L29/6659H01L29/66659H01L29/7833H01L29/7835H01L29/7802H01L29/7809H01L29/7812
Inventor 金东昔李政官
Owner DONGBU HITEK CO LTD