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x-ray imager with cmos sensor embedded in tft flat panel

A CMOS sensor and X-ray technology, applied in X/γ/cosmic radiation measurement, instruments, scientific instruments, etc., can solve the problem of high cost

Active Publication Date: 2018-10-16
VAREX IMAGING CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

CMOS sensors can overcome many of the technical disadvantages of a-Si TFT flat panel detectors, but the cost of building a detector from multiple CMOS wafers is considered prohibitive for almost all medical device applications

Method used

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  • x-ray imager with cmos sensor embedded in tft flat panel
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  • x-ray imager with cmos sensor embedded in tft flat panel

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Embodiment Construction

[0017] Various embodiments of x-ray imaging apparatus and imaging methods are described. It is to be understood that this disclosure is not limited to particular embodiments so described, as such may presently vary. An aspect described in connection with a particular embodiment is not necessarily limited to that embodiment, but may be practiced in any other embodiment. Also, in the following description, specific details such as examples of specific materials, dimensions, processes, etc. may be given in order to provide a thorough understanding of the present disclosure. It will be apparent, however, to one of ordinary skill in the art that these specific details need not be employed to practice the disclosed embodiments. In other instances, well known components or process steps may not have been described in detail so as not to unnecessarily obscure the embodiments of the present disclosure.

[0018] Various relative terms such as "front", "rear", "top" and "bottom", "uppe...

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Abstract

An x-ray imaging device comprising: a scintillator layer configured to generate light from x-rays, a TFT detector array at a first surface of the scintillator layer to detect light generated in the scintillator layer, and A CMOS sensor at the second surface of the scintillator layer to detect light generated in the scintillator.

Description

technical field [0001] Embodiments of the present disclosure relate to x-ray imaging apparatus and methods. In particular, an x-ray imaging device with a CMOS sensor embedded in a TFT panel is described. Background technique [0002] Currently, most flat panel x-ray imagers are based on amorphous silicon (a-Si) thin film transistor (TFT) sensor technology. Although TFT flat panel imagers are capable of providing images with a large field of view (FOV), they have limitations in resolution, low-dose performance, and readout speed. Resolution is typically limited to approximately 70 μm for low-speed mammography applications and more typically to 140 μm for radiographic imaging. In dynamic applications, to achieve reasonably low-dose performance, use larger effective pixel sizes of 180 μm to 400 μm, both at full resolution and in binned (bin) modes of operation, with x-ray quantum-limited doses in the 3- In the range of 10nGy, indicated by a minimum electronic noise of about ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/16G01T1/20G01T7/00
CPCG01T1/20185
Inventor R·韦斯菲尔德R·科尔贝斯I·莫洛维A·甘谷利
Owner VAREX IMAGING CORP