Unlock instant, AI-driven research and patent intelligence for your innovation.

Substrate support ring for more uniform layer thickness

A substrate and support surface technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid state devices, etc., can solve the problems of uneven layer formation, affecting the uniformity of layer thickness on the wafer surface, and uneven process

Active Publication Date: 2021-06-18
APPLIED MATERIALS INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inventors have observed that in some processes, process non-uniformity may occur, which affects the thickness uniformity of layers on the wafer surface
In particular, different deposition or growth rates have been observed at the edge of the substrate, resulting in non-uniform layer formation at the edge of the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate support ring for more uniform layer thickness
  • Substrate support ring for more uniform layer thickness
  • Substrate support ring for more uniform layer thickness

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Embodiments of the present invention provide a substrate support ring (or edge ring) for supporting a substrate, such as a semiconductor wafer, in a chamber for processing. It has been observed that substrate support rings according to embodiments of the present invention beneficially affect process uniformity, particularly at the edges of the substrate. Embodiments of the disclosed support ring can beneficially affect the layers deposited or grown on the substrate.

[0016] figure 1 A top view of a substrate support ring (or edge ring 100 ) according to an embodiment of the invention is depicted. The illustrative edge ring 100 includes an inner ring 102 having a support surface 104 centered about a center point C. As shown in FIG. The support surface 104 is configured to support a substrate of a given diameter, such as a 200, 300, 450 mm semiconductor wafer, or the like, along the backside edge of the substrate. For example, the support surface 104 has an inner diam...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided herein are embodiments of substrate support rings that allow for a more uniform thickness of a layer deposited or grown on a substrate. In some embodiments, the substrate support ring includes an inner ring having a centrally located support surface for supporting the substrate; and an outer ring extending radially outward from the support surface, wherein the The outer ring comprises a reactive surface region disposed above and substantially parallel to a support plane of the support surface, and wherein the reactive surface extends from about 24 mm to about 45 mm beyond the support surface .

Description

technical field [0001] Embodiments of the invention generally relate to semiconductor processing. Background technique [0002] Substrates, such as semiconductor wafers, may be supported by support means, such as edge rings, for processing within the processing chamber. In some semiconductor fabrication processes, such as processes for depositing or growing oxide layers, a combustion reaction is initiated in the processing chamber to generate oxygen species to aid in the growth of the oxide layer. However, the inventors have observed that in some processes, process non-uniformities may occur which affect the thickness uniformity of the layers on the wafer surface. In particular, different deposition or growth rates have been observed at the edge of the substrate, resulting in non-uniform layer formation at the edge of the substrate. [0003] Accordingly, the inventors have provided embodiments of substrate supports that can help improve process uniformity during some semic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683
CPCH01L21/67248H01L21/68735H01L21/02274
Inventor 潘恒劳拉·哈夫雷查克克里斯托弗·S·奥尔森
Owner APPLIED MATERIALS INC