Semiconductor device and method for manufacturing semiconductor device
A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., capable of solving problems such as adverse effects of semiconductor components or integrated circuit characteristics
Active Publication Date: 2016-05-11
株式会社PANGEA
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Problems solved by technology
[0006] In this case, the metal of the electrode provided on the one substrate side will directly contact the semiconductor oxide film provided on the surface of the other substrate, and when the metal diffuses to the other substrate side in the subsequent heat treatment step, Adverse effects on the characteristics of semiconductor elements or integrated circuits on the substrate side
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[0015] Hereinafter, the semiconductor device and the manufacturing method of the semiconductor device according to the embodiment will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by this embodiment. Hereinafter, a so-called WaferonWafer (wafer-on-wafer) in which a first substrate on which a logic circuit is formed and a second substrate on which an image sensor is formed is bonded together as an example. On ChiponWafer (chip on a chip) or ChiponChip (chip on a chip). In addition, the circuit formed on the first substrate or the second substrate is not limited to a logic circuit or an image sensor, and may be any semiconductor integrated circuit.
[0016] figure 1 It is an explanatory diagram showing a schematic cross section of the semiconductor device 1 according to the embodiment. Such as figure 1 As shown, the semiconductor device 1 includes a low-adhesive film 2 , a first substrate 31 and a second subst...
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A semiconductor device according to an embodiment includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.
Description
[0001] [Related applications] [0002] This application benefits from the priority of Japanese Patent Application No. 2014-224602 filed on Nov. 4, 2014, the entire contents of which are incorporated herein by reference. technical field [0003] The present embodiment generally relates to a semiconductor device and a method of manufacturing the semiconductor device. Background technique [0004] Conventionally, there is a semiconductor device in which the occupied area can be reduced by stacking semiconductor chips in multiple stages. Such a semiconductor device is manufactured by, for example, bonding a substrate on which semiconductor elements or integrated circuits are formed in multiple stages and dicing it into semiconductor chip units. [0005] Generally, a semiconductor oxide film is provided on the surface of each bonded substrate, and a plurality of electrodes connected by bonding the substrates are provided at corresponding positions on the surface of each semicond...
Claims
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IPC IPC(8): H01L21/768
CPCH01L21/768H01L2224/80013H01L2224/80902H01L24/05H01L24/08H01L24/80H01L2224/03452H01L2224/03462H01L2224/03602H01L2224/05571H01L2224/05647H01L2224/05686H01L2224/06505H01L2224/0807H01L2224/08145H01L2224/80896H01L2224/80986H01L2224/9202H01L2224/9205H01L2224/05568H01L2224/05576H01L2224/08112H01L2224/08121H01L2224/80948H01L21/187H01L2224/05547H01L2224/80035H01L2224/80935H01L27/14634H01L27/14636H01L27/1469H01L2224/80895H01L2224/8034H01L2224/80357H01L2924/00014H01L2924/05042H01L2924/05442H01L2224/05026H01L2224/05082H01L2224/05147H01L2924/1431
Inventor 芦立浩明谷田一真
Owner 株式会社PANGEA