Small-size chip thermistor and fabrication method thereof

Abstract

The invention discloses a small-size chip thermistor and a fabrication method thereof. The fabrication method comprises the steps as follows: a thermal ceramic chip is prepared, wherein the thickness of the thermal ceramic chip is equal to the distance between two conductive terminals of the small-size chip thermistor; first conductive electrode layers are formed on two surfaces of the thermal ceramic chip through sputtering by a magnetron sputtering process; the thermal ceramic chip is cut into a thermistor chip which is the same as the small-size thermistor in size; the two surfaces of the thermal ceramic chip correspond to the two conductive terminals of the thermistor chip; the thermistor chip is coated with a glass paste layer, and then the glass paste layer is sintered to a glass layer; the glass layer at the two conductive terminals of the thermistor chip is removed to expose the first conductive electrode layers; and second conductive electrode layers are formed at the two conductive terminals of the thermistor chip to form the small-size chip thermistor. According to the invention, the technical bottlenecks generated after the chip thermistor prepared by the prior art is miniaturized are solved.

Description

technical field [0001] The invention relates to a chip thermistor, in particular to a small-sized chip thermistor and a manufacturing method thereof. Background technique [0002] In recent years, as the functions of smart phones and smart wearables have become stronger and stronger, the size of components is required to be smaller and smaller. Some electronic devices such as smart phones and smart wearables gradually tend to use passive components below the size of imperial 0201 and 01005. The chip thermistor encounters several major technical bottlenecks in the miniaturization, mainly as follows: First, because the area of ​​the conductive end is too small (no more than 0.08mm 2 ) leads to poor ohmic contact between ceramics and silver electrodes, resulting in electrical performance that cannot meet the standard or is extremely dispersed; second, because the volume is only one-eighth of the original minimum specification 0402, it is extremely difficult to evenly coat the s...

AI Technical Summary

Problems solved by technology

The chip thermistor encounters several major technical bottlenecks in the miniaturization, mainly as follows: First, because the area of ​​the conductive end is too small (no more than 0.08mm 2 ) leads to poor ohmic contact between ceramics and silver electrodes, resulting in electrical performance that cannot meet the standard or is extremely dispersed; second, because the volume is only one-eighth of the original minimum specification 0402, it is extremely difficult to evenly coat the surface with a protective glass layer. The traditional coating process cannot be realized at all, and the poor protective layer of ceramic glass will lead to the rapid deterioration of the product after passing through the electroplating solution and acidic environment

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