Microwave transistor with patterned gate structure and preparation method thereof
A patterning and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical solid-state devices, etc., can solve problems affecting the quality of epitaxial materials, avoid the decline of two-dimensional electron density, enhance modulation capability, suppress The effect of the short channel effect
Active Publication Date: 2019-01-15
XIAMEN SANAN INTEGRATED CIRCUIT
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Problems solved by technology
However, this puts forward very high requirements on the epitaxial process, because different semiconductor crystal materials have different growth temperatures, and frequent switching of temperatures will affect the final quality of epitaxial materials
None of the above methods can better solve the existing problems
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[0030] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. The drawings of the present invention are only schematic diagrams for easier understanding of the present invention, and their specific proportions can be adjusted according to design requirements. Those skilled in the art should understand that the upper and lower relationships of relative components in the figures described herein refer to the relative positions of the components, so all of them can be turned over to present the same components, which should all fall within the scope of the present specification. In addition, the numbers of components and structures shown in the figure are only examples, and are not intended to limit the numbers, and can be adjusted according to actual design requirements.
[0031] refer to Figure 1 to Figure 5 , a microwave transistor with a patterned gate structure includes a substrate 1, a buffer layer 2,...
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The invention discloses a microwave transistor with a patterned gate structure. The transistor has a patterned region between the source and the drain in the barrier layer. In the patterned region, a plurality of Partially recessed grooves, the gate is covered on the patterned area, and the length of the gate is greater than the length of the grooves in the direction of the gate length to completely cover the grooves. On the one hand, by virtue of the groove The setting enhances the gate control ability of the device and suppresses the short channel effect; on the other hand, the original heterogeneous structure under the gate is preserved to avoid the decrease in the conductivity caused by the decrease of the two-dimensional electron gas density, thereby achieving the goal of suppressing the short channel effect At the same time, the current output capability of the device is guaranteed. The invention also discloses a preparation method of the microwave transistor.
Description
technical field [0001] The invention relates to a semiconductor device, in particular to a microwave transistor with a patterned gate structure and a preparation method thereof. Background technique [0002] A high electron mobility transistor (HEMT) includes a substrate, a buffer layer, a channel layer, a barrier layer, and a source, drain, and gate on the barrier layer. The two-dimensional electron gas layer (2-2DEG) that exists at the heterojunction interface between the source and the drain controls the electron concentration of the 2-DEG by changing the gate voltage between the source and the drain, thereby controlling the working state. HEMTs are a new generation of transistors that are the first choice for high-frequency, high-voltage, high-temperature and high-power applications due to their excellent performance. [0003] At present, based on the common HEMT structure, the improvement of the frequency performance of microwave devices mainly depends on reducing the ...
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IPC IPC(8): H01L29/778H01L29/06H01L21/335H01L29/423H01L21/28
CPCH01L21/28H01L29/06H01L29/42316H01L29/66431H01L29/778H01L21/28587H01L29/2003H01L29/475H01L29/7786H01L21/28581H01L21/32133H01L23/66H01L29/205H01L29/66462H01L2223/6683
Inventor刘胜厚叶念慈黄侯魁
OwnerXIAMEN SANAN INTEGRATED CIRCUIT