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Gas Sensors and Sensor Devices

A gas sensor and gas technology, applied in the direction of measuring devices, instruments, scientific instruments, etc., can solve the problem of increased power consumption of the detection circuit

Active Publication Date: 2020-09-25
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in order to measure the change in resistance, it is necessary to use a constant current power supply to supply current to the CuBr film, and there is a problem that the power consumption of the detection circuit itself becomes large.

Method used

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  • Gas Sensors and Sensor Devices
  • Gas Sensors and Sensor Devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0145] made as Figure 6A ~ Figure 6C The gas sensor shown. Specifically, the above-mentioned gas sensor was produced by the following method.

[0146]

[0147] A gold electrode (first electrode 2) with a width of 10 mm x a length of 25 mm x an average thickness of 30 nm was formed by vacuum evaporation on a silicon wafer with a thermal oxide film having an average thickness of 1 μm and a width of 12 mm x a length of 50 mm x a thickness of 0.6 mm.

[0148]

[0149] A copper layer having a width of 8 mm×length of 30 mm×an average thickness of 0.5 μm was formed using a vacuum deposition method so as to cover part of the first electrode 2 . Next, by the same method as described in "2. Experimental" of the literature (Pascal Lauque, Marc Bendahan, Jean-Luc Seguin, Kieu An Ngo, Philippe Knauth, Analytica Chimica Acta, 515, (2004), 279-284) Method A copper bromide aqueous solution was used to convert the copper in the copper layer into cuprous bromide to obtain a solid electro...

Embodiment 2

[0158] made as Figure 8A ~ Figure 8C The gas sensor shown. Specifically, the above-mentioned gas sensor was produced by the following method.

[0159]

[0160] A gold electrode (first electrode 2) with a width of 10 mm x a length of 20 mm x an average thickness of 60 nm was formed by vacuum evaporation on a silicon wafer with a thermal oxide film having an average thickness of 1 μm and a width of 12 mm x a length of 50 mm x a thickness of 0.6 mm.

[0161]

[0162] Cuprous bromide (solid electrolyte layer 1 ) of width 8 mm×length 30 mm×average thickness 200 nm was formed using radio frequency magnetron sputtering (RF magnetron sputtering) so as to cover part of the first electrode 2 .

[0163] The conditions of the radio frequency magnetron sputtering method are as follows.

[0164] ·RF power: 100W

[0165] · Sputtering gas: Ar

[0166] Sputtering gas: flow rate 30sccm

[0167] ·Air pressure: 0.5Pa

[0168]

[0169] Furthermore, if Figure 8A As shown, a gold elec...

Embodiment 3

[0179] made as Figure 10 The gas sensor shown. Specifically, the above-mentioned gas sensor was produced by the following method.

[0180]

[0181] Use vacuum evaporation method to form 2 gold electrodes (the first electrode 12 and the first electrode 12 and second electrode 13). The above-mentioned two gold electrodes were provided with a gap of 1 mm between opposing end portions.

[0182]

[0183] A copper layer having a width of 8 mm x a length of 30 mm x an average thickness of 0.5 μm was formed on the above two gold electrodes using a vacuum evaporation method. Next, by the same method as described in "2. Experimental" of the literature (Pascal Lauque, Marc Bendahan, Jean-Luc Seguin, Kieu AnNgo, Philippe Knauth, Analytica Chimica Acta, 515, (2004), 279-284) Method A copper bromide aqueous solution was used to change the copper in the above copper layer to cuprous bromide to fabricate a solid electrolyte layer 11 and obtain a sample.

[0184]

[0185] A copper ...

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Abstract

The present invention provides a gas sensor comprising: a solid electrolyte layer containing positive charge carriers for coordinating a gas to be detected; an electrode arranged on a part of one surface of the solid electrolyte layer; Mechanism for the migration of load carriers.

Description

technical field [0001] The present invention relates to a gas sensor and a sensor device including the gas sensor. Background technique [0002] Conventionally, gas sensors that detect gases based on changes in electrical resistance have been used as gas sensors that detect gases such as ammonia and nitrogen oxides. The gas sensor detects the gas based on a change in resistance of the semiconductor caused by adsorption of the gas to the surface of a semiconductor such as tin dioxide. [0003] In the gas sensor that detects gas based on a change in resistance, in order to measure the changed resistance, it is necessary to supply current to the semiconductor using a constant current power supply. Therefore, the gas sensor that detects gas based on a change in resistance has a problem in that the power consumption of the detection circuit itself increases. [0004] In addition, for the gas sensor, the semiconductor needs to be heated to a temperature (for example, 400° C.) at...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/416
CPCG01N27/4073G01N27/4065G01N27/4071
Inventor 百濑悟壶井修曾我育生
Owner FUJITSU LTD
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