Substrate processing equipment
A technology for processing equipment and substrates, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of increased RF power loss, unfavorable plasma processing, damage, etc.
Active Publication Date: 2022-01-25
AP SYST INC
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Problems solved by technology
Here, RF variations are especially detrimental to plasma processing due to electrical damage on the fabricated wafer, parasitic capacitive plasma in the processing chamber, or RF sheath generation
Parasitic capacitive currents from inductors can be a major cause of plasma and process non-uniformity, damage to process chambers and fabricated wafers (e.g., arcing), and large increases in RF power loss
[0005] Also, in the substrate processing apparatus according to the related art, since the uniform movement and distribution of the reactive gas plasma is difficult, the reactive gas plasma may not be uniformly distributed over the entire surface of the substrate and thus concentrated to one point
As a result, thin films deposited on the substrate or etched may have non-uniform thickness
Method used
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[0031] Hereinafter, specific embodiments will be described in more detail with reference to the accompanying drawings. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the description, the same elements are indicated with the same reference numerals. In the drawings, the dimensions are partially exaggerated for clarity of illustration. Like reference numerals refer to like elements throughout.
[0032] figure 1 is a cross-sectional view of a substrate processing apparatus according to an exemplary embodiment.
[0033] refer to figure 1 , the substrate processing apparatus according to the exemplary embodiment includes: a chamber 110 in which a substrate 10 is accommodated and a substrate processing space is provided...
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The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that generates plasma by using an induction coil. Provided is a substrate processing apparatus. The substrate processing apparatus includes: a chamber configured to accommodate a substrate and provide a substrate processing space; a process gas supply unit configured to supply process gas into the chamber; an induction coil provided at the chamber at least a part of the exterior; and a power supply unit connected to a central area between both ends of the induction coil and applying power to the induction coil through the central area. The substrate processing equipment of the present invention can reduce the damage to the substrate and improve the uniformity of substrate processing.
Description
technical field [0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that generates plasma by using an induction coil. Background technique [0002] The substrate processing apparatus may be an apparatus for performing substrate processing such as etching or deposition on a substrate by using a physical or chemical reaction such as a plasma phenomenon in a vacuum state. Generally, during substrate processing, by using this substrate processing apparatus, a reaction gas is injected into a chamber to perform substrate processing. The injected reactive gas generates a plasma in the chamber by applying power. Accordingly, it is possible to perform substrate processing in which the surface of the substrate is etched or deposited by plasma-phase species such as radicals formed in the chamber according to the purpose for substrate processing. [0003] In the substrate processing apparatus according to...
Claims
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IPC IPC(8): H01L21/67H01J37/32
CPCH01J37/3211H01L21/67236
Inventor 金俊浩安载信韩宰贤
Owner AP SYST INC