Unlock instant, AI-driven research and patent intelligence for your innovation.

Reading control circuit and method of norflash

A reading control and circuit technology, applied in the field of norflash reading control circuit, can solve the problem of increasing system power consumption and achieve high efficiency

Active Publication Date: 2017-03-29
GREE ELECTRIC APPLIANCES INC
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reading of norflash requires a pulse trigger signal. At present, the reading control circuit and the CPU are designed with the same frequency. If the highest reading efficiency is to be achieved, the CPU clock cycle must be half of the flash reading time, and the CPU frequency needs to be increased. System Power Consumption

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reading control circuit and method of norflash
  • Reading control circuit and method of norflash
  • Reading control circuit and method of norflash

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with aspects of the invention as recited in the appended claims.

[0023] Before the description of the embodiments, it should be noted that, for the convenience and specificity of the description, the embodiments of this group are aimed at the read control circuit of norflash, but are not limited to the scope limited in the embodiments.

[0024] The processor in the following exemplary embodiments is only an exemplary description, and other devices having simi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a reading control circuit and method of a norflash. The reading control circuit comprises a gating clock circuit, a delay controller and a data selector, wherein the gating clock circuit is used for generating a reading trigger signal under a low-frequency condition; the delay controller is used for generating a reading trigger signal under a high-frequency condition; an input end of the data selector is connected with output ends of the gating control circuit and of the delay controller, and is used for selectively outputting the reading trigger signals to the norflash. According to the reading control circuit and method of the norflash, a CPU can work at lower frequencies without losing execution efficiency, and the CPU is supported to work at high frequencies at the same time, so that the highest efficiency of flash reading is achieved when the CPU works at different frequencies.

Description

technical field [0001] The invention relates to a control circuit, in particular to a norflash reading control circuit and method. Background technique [0002] IOT technology is advancing by leaps and bounds. As the core device of IOT control, MCU is used more and more widely. Norflash, as a non-volatile storage device, is an on-chip program memory integrated by MCU. Because MCU is limited by the storage capacity of SRAM, CPU instructions are generally executed on the flash, so the efficiency of the flash reading circuit directly affects the performance of the entire chip. The reading of norflash requires a pulse trigger signal. At present, the reading control circuit and the CPU are designed with the same frequency. If the highest reading efficiency is to be achieved, the CPU clock cycle must be half of the flash reading time, and the CPU frequency needs to be increased. The power consumption of the system. Contents of the invention [0003] The technical problem to be...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26
CPCG11C16/26
Inventor 陈恒方励温浪明
Owner GREE ELECTRIC APPLIANCES INC