Flash manufacturing method
A manufacturing method and flash memory technology, applied in the field of flash memory manufacturing, can solve problems such as devices that are prone to breakdown
Active Publication Date: 2017-10-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0004] The purpose of the present invention is to provide a method of manufacturing flash memory, to solve the problem in the prior art that the tip of the control gate layer is generated due to over-etching the control gate layer, and when erasing data, a High electric field, easy to break down the device
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[0035] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0036] refer to figure 1 , which is a flow chart of the manufacturing method of the flash memory provided in the embodiment. Such as figure 1 As shown, the manufacturing method of the flash memory includes:
[0037] S1: providing a substrate, on which a floating gate oxide layer, a floating gate layer, a control gate layer and a dielectric layer are sequentially formed;
[0038] S2: Etching the dielectric layer to expose the control gate layer to form an opening;
[0039] S3: forming a first side wall on the...
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Abstract
The invention provides a flash manufacturing method. The flash manufacturing method comprises the steps of: sequentially forming a floating gate oxidation layer, a floating gate layer, a control gate layer and a medium layer on a substrate, etching the medium layer, so that the control gate layer is exposed, forming a first side wall on the side wall of the opening generated by etching, etching the control gate layer at the bottom of the opening by taking the first side wall as the mask, reducing the thickness of the first side wall, so that the first side wall retreats to expose the tip of the control gate layer generated by etching, and oxidizing the tip of the control gate layer, so that the tip of the control gate layer is passivated and becomes rounded. The problem that the tip of a control gate discharges to puncture a device due to the fact that a high electric field is formed between a word line gate and the control gate when data is erased can be avoided; and thus, the reliability and the stability of the device are improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a flash memory. Background technique [0002] Flash memory (Flash) is a kind of non-volatile memory, even if the power is off, the data will not be lost. It has the advantages of high integration, fast access speed, good reliability, easy to erase and rewrite, so it is used in mobile phones, It has been widely used in mobile communication devices such as notebooks and personal computers. [0003] The existing flash memory manufacturing method usually forms a floating gate oxide layer, a floating gate layer, an isolation layer, a control gate layer and a dielectric layer in sequence on a semiconductor substrate, and then removes a part of the dielectric layer by dry etching to form an opening. In order to expose the control gate layer, in order to ensure that there is no polysilicon residue after etching, it is usually necessary to maintain en...
Claims
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Login to View More IPC IPC(8): H01L27/11517H10B41/00
CPCH10B41/00
Inventor 徐涛李冰寒江红高超王哲献
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP