Thin film transistor and its manufacturing method, driving circuit and display device
A technology for thin film transistors and driving circuits, which is applied in the manufacture of transistors, semiconductor/solid-state devices, circuits, etc., can solve the problems of unstable gray-scale image signals of data lines, high turn-off leakage current, and poor image contrast, etc. Overall image quality, gray-scale image signal stability, and the effect of reducing off-leakage current
Active Publication Date: 2020-03-10
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Because the double-gate transistor is in the off state, the off-leakage current is relatively high, which in turn affects the data line voltage V data Grayscale image signal is unstable, resulting in poor image quality such as: poor image contrast, color cast...etc.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0027] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar structures in the drawings, and thus their repeated descriptions will be omitted.
[0028] The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the invention. However, those skilled in the art will appreciate that the technical solutions of the present invention may be practiced without one or more of the specific...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The embodiment of the invention provides a film transistor, the manufacture method of the film transistor, a drive circuit and a display apparatus. The film transistor comprises a substrate, and at least three grids arranged on the substrate, wherein the at least two grids are partially overlapped with each other along the direction perpendicular to the substrate. A first grid in the drive circuit with the film transistor is configured as a control grid, a second grid is configured as a floating grid, and a third grid is configured as a selecting grid, wherein the voltage of the selecting grid is lower than that of the control grid. Turn-off leakage current can be reduced, and image quality can be improved.
Description
technical field [0001] The invention relates to semiconductor technology, in particular to a thin film transistor, a manufacturing method thereof, a driving circuit and a display device. Background technique [0002] At present, compared with single-gate transistors, double-gate transistors have the characteristics of larger threshold voltage (Vth) and lower leakage current, and gate-induced drain leakage (GIDL, Gate Induced Drain Leakage, which affects the reliability of MOSFETs) will occur. Greater impact). And the general GOA operation (GOA technology is to integrate the Gate Driver IC on the Array glass substrate, that is, remove the Gate Driver IC and use TFT wiring to form a gate circuit to form a GOA unit to realize the driving function of the Gate Driver IC.) The voltage is between -7.0 (ON State) ~ 6.5V (OFF State). Because the double-gate transistor is in the off state, the off-leakage current is relatively high, which in turn affects the data line voltage V dat...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/423H01L21/28H01L21/336G09G3/3225
CPCG09G3/3225H01L29/42384H01L29/6675H01L29/78645H01L29/78672
Inventor 许嘉哲
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD