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Microwave power amplifier for improving temperature uniformity of power unit

A power unit, microwave power technology, applied in power amplifiers, amplifiers, improved amplifiers to reduce nonlinear distortion, etc., can solve problems such as poor heat dissipation, and achieve the effect of reducing temperature, easy implementation, and improving temperature uniformity

Pending Publication Date: 2018-02-09
SUZHOU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is of great significance to obtain low-temperature transistors under certain power consumption conditions, but its heat dissipation effect is not good

Method used

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  • Microwave power amplifier for improving temperature uniformity of power unit
  • Microwave power amplifier for improving temperature uniformity of power unit
  • Microwave power amplifier for improving temperature uniformity of power unit

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] Unless the context clearly states otherwise, the number of elements and components in the present invention can exist in a single form or in multiple forms, and the present invention is not limited thereto. Although the steps in the present invention are arranged with labels, they are not used to limit the order of the steps. Unless the order of the steps is clearly stated or the execution of a certain step requires other steps as a basis, the relative order of the steps can be adjusted. It can be understood that the term "and / or" used herein refers to and covers any and all possible combina...

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Abstract

The invention provides a microwave power amplifier for improving temperature uniformity of a power unit. The microwave power amplifier for improving temperature uniformity of the power unit comprisesa plurality of power units which are arranged in parallel, wherein each power unit comprises a plurality of transistors, collectors of the transistors in two adjacent power units are electrically connected via a first connection unit, the first connection unit comprises a first metal layer, an insulation dielectric layer and a second metal layer which are sequentially arranged from bottom to top,the first metal layer of the first connection unit communicates with a cooling device, and the second metal layer of the first connection unit is connected with the collectors of the transistors in the two adjacent power units; and in the first connection unit, the area of the second metal layer is gradually reduced along a temperature reduction direction according to a temperature distribution direction of the transistors in the power units.

Description

technical field [0001] The invention belongs to the technical field of microwave power amplifiers, in particular to a microwave power amplifier for improving the temperature uniformity of a power unit. Background technique [0002] Modern communications require microwave power amplifiers to be able to provide high-power output, and at the same time have good linearity and efficiency. However, for power tubes, due to the low heat dissipation coefficient of the substrate, the high-power output increases the thermal effect of the transistor and forms a high-temperature active device. At this time, the performance of the transistor is degraded, and the linearity and efficiency deteriorate. Even under higher temperature conditions, Its reliability will be affected. Therefore, in order to obtain a high-performance power amplifier, the bottleneck effect of thermal effects should be solved. [0003] The usual practice in the prior art is to improve the heat dissipation environment ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L23/367H03F1/30H03F1/32H03F3/193H03F3/21
CPCH01L27/0211H03F1/301H03F1/3205H03F3/193H03F3/21H01L23/367
Inventor 孙晓红张晓东
Owner SUZHOU UNIV OF SCI & TECH
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