147 results about "Microwave power amplifiers" patented technology

Linearity of an RF/microwave power amplifier is enhanced by an amplitude and phase distortion correction mechanism based upon signal envelope feedback, that operates directly on the RF signal passing through the power amplifier. A phase-amplitude controller responds to changes in gain and phase through the RF/microwave power amplifier signal path caused by changes in RF input power, DC power supply voltages, time, temperature and other variables, and controls the operation of a gain and phase adjustment circuit, so as to maintain constant gain and transmission phase through the RF/microwave power amplifier.

A multi-stage RF/Microwave power amplifier circuit is provided that is capable of operating efficiently at multiple output power levels. The amplifier comprises first and second amplifying stages, an output impedance matching network connected to the output of first amplifying stage and an interstage impedance matching network connected between the outputs of said first and second amplifying stages. In a high power mode, the first amplifying stage is enabled and the second amplifying stage is disabled and the output and interstage impedance matching networks present a first value of the output impedance that improves the efficiency of the first amplifying stage. In a low power mode, the first amplifying stage is disabled and the second amplifying stage is enabled, and output and interstage impedance matching networks present a second value of the output impedance that improves the efficiency of the second amplifying stage.

A predistortion power amplifier architecture has a power amplifier which receives an input via an amplitude modulator and a phase modulator. A sample of the output of the amplifier and a sample of the input to the amplifier are applied to an adaptive pre-distorter subsystem. The adaptive pre-distorter generates a gain correction signal which is applied to the amplitude modulator and a phase correction signal which is applied to the phase modulator. This serves to predistort the input signal to the power amplifier to compensate for non-linearities in the power amplifier. A switching arrangement alternately couples a sample of the input and output of the amplifier to a first and a second envelope detector. The outputs of the envelope detectors are applied to a difference amplifier. The switching arrangement has a chopping action on the signals which helps to offset imbalances in the characteristics of the two envelope detectors.

The invention relates to a method for on-chip test of a microwave power amplifier chip and a test system thereof, which belong to the field of chip test technology of microwave communication. The invention is characterized in that a pulse-type bias voltage greatly reduces the influence of heat on the performance of a microwave power amplifier, thus authentically achieving on-chip test on probe test of a chip and obviating the installation of a package and an external heat dissipation system. A pulse modulation and pulse generation device modulates a pulse signal as the bias of the microwave power amplifier by use of the switch characteristics of a transistor. The DC pulse signal is connected with the gate of the transistor as the gate voltage to control the on/off of a transistor channel. When a positive voltage pulse signal is applied, the transistor channel is constructed so that a current source connected with the drain of the transistor can be applied on a source load through the channel; when a zero pulse signal is applied, the transistor channel is cutoff to prevent the current source from flowing to the source through the channel, so that no current passes through the load.

The present invnetion relates to a HEMT-HBT Doherty microwave amplifier and more particularly to a microwave amplifier configured as a Doherty amplifier. The amplifier includes a carrier amplifier, a peak amplifier, a Lange coupler at the input of the amplifiers and quarter wave amplifier at the output of the amplifiers. In order to further increase the efficiency, the Doherty amplifier is formed from HEMT/HBT technology to take advantage of the low-noise performance of HEMTs and the high-linearity of HBTs to form a relatively efficient amplifier that functions as a low-noise amplifier at low power levels and automatically switches to high-power amplification for relatively high-impact RF power levels.

The invention relates to a reconfigurable radio frequency and microwave power amplifier. The reconfigurable radio frequency and microwave power amplifier comprises an input radio frequency switch, anadjustable input matching network, a power amplifier stage, an adjustable output matching network and an output radio frequency switch which are connected in turn, and an adjustable harmonic impedancecontrol network and a bias and control circuit; and the adjustable input matching network and the adjustable output matching network respectively comprise at least one LC network with a fundamental wave impedance conversion function, wherein the LC network comprises at least one reconfigurable device, and the reconfigurable device is connected with a passive device in the LC network in parallel.According to the reconfigurable radio frequency and microwave power amplifier provided by the invention, the reconfigurable harmonic impedance control network and the fundamental wave impedance matching network are realized through the adjustable input matching network, the adjustable harmonic impedance control network and the adjustable output matching network; and when a power amplifier works indifferent bands of a linear power amplifier mode, a load impedance network can be reconfigured in real time, which satisfies the fundamental wave impedance and harmonic load required by each frequency band.

The invention discloses a bias circuit used in a Ku waveband internally-matched field effect transistor. The bias circuit is characterized in that the bias circuit consists of a grid bias circuit of amicrostrip stub structure, the Ku waveband internally-matched field effect transistor and a drain bias circuit of a dual-segment microstrip stub structure, wherein the grid bias circuit is connectedwith the grid of the Ku waveband internally-matched field effect transistor, while the drain bias circuit is connected with the drain of the Ku waveband internally-matched field effect transistor. Thebias circuit can effectively restrain low-frequency oscillation which frequently occurs inside a Ku waveband microwave power amplifier, thereby increasing the stability of the amplifier and broadening the bandwidth of the bias circuit at very low insertion loss. Therefore, the bias circuit can be used in various Ku waveband microwave power amplifiers based on internally-matched field effect transistors.

A compact amplifier output bias circuit is used as a broadband harmonic termination. The bias circuit is adapted as a harmonic termination circuit to produce an effective low impedance at the signal harmonic frequencies while having the capability of supplying DC power to the amplifier stage, optionally, if needed. A pi network is coupled to an active device output through a predetermined length of transmission line tuned for optimum power added efficiency in the frequency band of operation and provides a low impedance at frequency bands above the frequency band of operation while allowing DC bias to be appliable to the active device output.

The invention relates to intelligent output circuit configuration of a microwave power amplifier, which is characterized in that: a radio frequency input is connected with an attenuator, and one end of the attenuator is connected with a micro-processor; the other end of the attenuator is connected with a power amplifier, and the other end of the power amplifier is connected with a coupler 1; one end of the coupler 1 is connected with a circulator, and the other end of the coupler 1 is connected with a detector 1; one end of the circulator is connected with a radio frequency output, and the other end of the circulator is connected with a coupler 2; the other end of the coupler 2 is respectively connected with a load and a detector 2, and the other end of the micro-processor is respectivelyconnected with a switch, an external interface, the detector 1 and the detector 2; and the other end of the switch is connected with a direct current input. The intelligent output technology of the microwave power amplifier has five functions of: a precise output control function, an accurate load judgment function, an effective reflection protection function, a service life prolonging function and a damage reducing function. The intelligent output technology allows the microwave power amplifier to be in a best working state.

Metal atoms are adhered to surface of ceramic dielectric directly under high-energy electric field through vacuum sputtering mode in high energy so as to overcome unreliable issue in intermediate transition layer or perforation connection existed in mode of thick film printed circuit. Comparing with similar products, the product produced by the disclosed technique possesses features of low cascade equivalent resistance, good high frequency performance in microwave from several GHz to some dozens of GHz, high fabricating precision prepared by photo etching. The invention is suitable for high frequency, microwave, minitype cases such as microwave power amplifier, and modules including blue teeth technical module, hybrid integrated circuit, as well as modules in handset and wireless microwave communication module.

The invention discloses a drain electrode modulation circuit for a GaN microwave power amplifier. A modulation signal and an inverse-phase signal transmitted through a phase inverter are simultaneously input into a logic circuit, and a high-end NMOS driver input signal and a low-end NMOS driver input signal are output after delaying is performed. The high-end NMOS driver input signal and the low-end NMOS driver input signal are respectively input into a high-end NMOS driver and a low-end NMOS driver, the output end of the high-end NMOS driver and the output end of the low-end NMOS driver are respectively connected to a grid electrode of the high-end NMOS driver and a grid electrode of the low-end NMOS driver. A source electrode of a high-end NMOS tube serves as a drain electrode voltage end of the GaN microwave power amplifier. The phenomenon that the drain electrode voltage end of the GaN microwave power amplifier is low in discharging speed and accordingly trailing is caused is avoided by means of the drain electrode modulation circuit, the delay time for modulating the signals to the rising edge and falling edge of the drain electrode voltage end is shortened, and overshoot voltage amplitude of the drain electrode voltage end is reduced.

One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.

A VSAT terminal including an antenna, a microwave power amplifier, a microwave low noise amplifier, a transmitter coupled via the microwave power amplifier to the antenna, a receiver coupled via the microwave low noise amplifier to the antenna, a user VSAT interface, and a controller in communication with the user VSAT interface and in electrical connection with the microwave power amplifier and the microwave low noise amplifier for supplying power thereto, the controller being operative to provide a less-than-full electrical power supply to either of the amplifiers in the absence of a communication session and operative to provide a full electrical power supply to either of the amplifiers in the presence of a communication session.

A compact amplifier output bias circuit is used as a broadband harmonic termination. The bias circuit is adapted as a harmonic termination circuit to produce an effective low impedance or act as a load at the signal harmonic frequencies while having the capability of supplying DC power to the amplifier stage, optionally, if needed. A pi network is coupled to an active device output and provides a low impedance at frequency bands above a frequency band of operation while allowing DC bias to be appliable to the active device output.

This invention refers to a high power microwave power amplifier, which contains driving circuit, insulated gate bipolar transistor, capacitor, pulse transformer and solid state power supply, wherein the two insulated gate bipolar transistors are serially connected between driving circuit and pulse transformer, capacitor set between insulated gate bipolar transistor and pulse transformer, insulated gate bipolar transistor is used as the switch of capacitor charge or discharge, high power pulse is generated by the instant discharge of capacitor, the solid state power supply is 28-500v, high voltage power supply is 1000-1600w. Said invention directly generates high power voltage by low voltage power supply for the normal work of klystron and greatly raises power supply efficiency.

The invention relates to an ScAlN/GaN high-electron-mobility transistor and a manufacturing method thereof, which mainly solve the problems of electric leakage and low working frequency of a homoepitaxy interface of an existing nitride microwave power device. The ScAlN/GaN high-electron-mobility transistor comprises a substrate, a nucleating layer, a GaN channel layer, an AlN insertion layer and an ScAlN barrier layer from bottom to top, wherein an InAlN cap layer is arranged between the insertion layer and the barrier layer; a barrier protection layer and an insulated gate dielectric layer are sequentially arranged at the upper part of the barrier layer, and ohmic contact regions for manufacturing a source electrode and a drain electrode are arranged on two sides from the InAlN cap layerto the insulated gate dielectric layer. A nucleating layer, a GaN channel layer, an AlN insertion layer and an InAlN cap layer in the structure are grown by adopting MOCVD; and the ScAlN barrier layerand the barrier protection layer are grown by adopting MBE. Homoepitaxial interface parasitic electric leakage is avoided, the working frequency of the device is high, the output current density is large, the manufacturing process is simple, and the transistor can be used for a high-frequency microwave power amplifier and a microwave millimeter wave integrated circuit.

The invention discloses a material structure of a GaN-base enhancement-mode electronic device, and relates to the technical field of application of GaN-base power electronics and microwave power amplifiers. The material structure comprises a substrate, a GaN buffer layer and an Al(In,Ga)N barrier layer which are sequentially formed on the substrate, and a passivation layer, wherein the Al(In,Ga)N barrier layer forms a thin barrier Al(In,Ga)N/GaN heterostructure; and the passivation layer is formed on the thin barrier Al(In,Ga)N layer, and prepared from n-GaN, SiO2 or SiNx. Therefore, an enhancement-mode gate structure can be formed without etching the Al(In,Ga)N barrier layer; the density of two-dimensional electron gas in a thin barrier Al(In,Ga)N/GaN heterojunction channel outside a gate is significantly improved by utilizing polarization of the passivation layer or an n-type doping effect; the GaN-base enhancement-mode power electronic device with good threshold uniformity and low dynamic on resistance can be prepared; a yield of the device is increased; and an industrialization progress of the GaN-base power electronic device is pushed.

The invention discloses a microwave power stabilizing device. The microwave power stabilizing device comprises a PID server, a microwave frequency mixer, a microwave power amplifier, a directional coupler and a microwave antenna which are sequentially connected, wherein the microwave frequency mixer is connected with a microwave source; the directional coupler is sequentially connected with the input end of a differential amplifier of the PID server through a envelope detector and a low pass filter, and the input end of the differential amplifier is further connected with a reference voltage source. By utilizing the frequency mixer, the controlled regulation of microwave power is realized, so that the feedback speed is higher than that of other manners for realizing the microwave power regulation by virtue of a voltage controlled attenuator; and by utilizing the PID server, the loop feedback is relatively rapid, the static difference variation of a system is small, and the system is relatively stable.

The invention discloses a test clamp for a microwave power amplifier. The test clamp comprises a base, adjustment pressure sheets and a clamping block, wherein one end of the base is provided with a positioning retaining wall protruding out of the upper surface of the base, and the upper surface of the other end, opposite to the positioning retaining wall, of the base is provided with the slidable clamping block; the two sides of a microwave power amplifier chip are clamped by the clamping block and the positioning retaining wall; and the upper surface of the base at the other two sides of the chip is provided with multiple threaded holes cooperating with long grooves arranged in the adjustment pressure sheets, the adjustment pressure sheets are fixed to the upper surface of the base when connecting pieces pass through the long grooves of the adjustment pressure sheets at the corresponding same side and the threaded holes in the upper surface of the base, and the other two sides of the chip are each clamped and fixed by one adjustment pressure sheet. According to the invention, the test clamp for the microwave power amplifier can be adjusted according to the size of the microwave power amplifier, is applied to clamping tests of microwave power amplifiers with various dimensions and the specifications, is convenient and rapid to adjust and does not damage the chip.