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Microwave power amplifier

A microwave power, carrier amplifier technology, applied in power amplifiers, amplifiers, amplifier types, etc.

Inactive Publication Date: 2003-03-05
TRW INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Unfortunately, only 40%-50% efficiency is achieved in the combined network disclosed in this patent

Method used

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  • Microwave power amplifier
  • Microwave power amplifier
  • Microwave power amplifier

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Embodiment Construction

[0017] The present invention relates to a microwave power amplifier, indicated generally at 20, configured as a Doherty amplifier. The microwave power amplifier 20 includes a carrier amplifier 22 and a peak amplifier 24 . In the well-known Doherty amplifier, the carrier amplifier and the peaking amplifier can be formed from heterojunction bipolar transistors (HBT) and especially as pre-matched 1.5*30μm 2 *4 refers to a DHBT device with a total emitter area of ​​180μm 2 . An example of such a device is found in "18-21GHz InP DHBT Linear Microwave Doherty Amplifier" by Kobayashi et al.: Abstracts of 2000 IEEE Proceedings of Radio Frequency Integrated Circuits pp. 179-182 of , which are hereby incorporated by reference. In order to improve the efficiency and linearity of the Doherty amplifier 20, the Doherty amplifier 20 is formed by HEMT / HBT technology to take advantage of the low noise performance and low internal modulation distortion of HMET and the high linearity of HBT....

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Abstract

The present invnetion relates to a HEMT-HBT Doherty microwave amplifier and more particularly to a microwave amplifier configured as a Doherty amplifier. The amplifier includes a carrier amplifier, a peak amplifier, a Lange coupler at the input of the amplifiers and quarter wave amplifier at the output of the amplifiers. In order to further increase the efficiency, the Doherty amplifier is formed from HEMT / HBT technology to take advantage of the low-noise performance of HEMTs and the high-linearity of HBTs to form a relatively efficient amplifier that functions as a low-noise amplifier at low power levels and automatically switches to high-power amplification for relatively high-impact RF power levels.

Description

[0001] Cross References to Related Applications [0002] This application is related to a commonly-owned pending patent application: Kevin W. Kobayashi, Application No. XXX, "Use of Doherty as a Predistortion Circuit for Linearizing Microwave Amplifiers," filed concurrently with this application, Attorney Docket 12-1101, and Kevin W. Kobayashi, Application No. XXX, "Asymmetrically Biased Highly Linear Balanced Amplifier," filed concurrently with this application, Attorney Docket No. 12-1110. technical field [0003] The present invention relates to a power amplifier, and more particularly to a microwave power amplifier topology, which acts as a low noise amplifier at low input signal levels and automatically switches to high power amplification for relatively high input signal levels. Background technique [0004] RF and microwave communication systems place increasing demands on the linearity and efficiency of power amplifiers. Unfortunately, conventional power amplifiers ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/07H03F1/02H03F1/30H03F3/193H03F3/21H03F3/60
CPCH03F2200/294H03F2200/372H03F2200/192H03F3/1935H03F1/306H03F3/60H03F1/0288H03F1/07
Inventor 凯文·W·科巴亚西
Owner TRW INC
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