Method for preparing single-layer capacitor element and its products

A capacitor and manufacturing method technology, applied in the direction of capacitor manufacturing, capacitors, electrical components, etc., can solve the problems of complex structure, complicated process, unreliable connection between electrodes, etc., and achieve good performance, low series equivalent resistance, and excellent performance. Effect

Inactive Publication Date: 2005-03-30
梁颖光 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology is basically a thick film printed circuit technology, which also uses raw material printing, lamination, cutting, and co-firing processes, so there will also be quality problems that the connection between electrodes is not reliable enough.
[0006] Motorola's U.S. Patent US6088215 als

Method used

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  • Method for preparing single-layer capacitor element and its products
  • Method for preparing single-layer capacitor element and its products
  • Method for preparing single-layer capacitor element and its products

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Such as figure 1 , 2The structure shown is one of the embodiments of the single-layer capacitor element of the present invention, which includes a 0.2mm thick single-layer ceramic dielectric layer 1 and an upper electrode layer 2 and a lower electrode layer respectively positioned on the opposite surfaces of the ceramic dielectric layer 1 3. The upper and lower electrode layers 2, 3 are firmly attached to the surface of the ceramic dielectric layer 1 through a vacuum high-energy sputtering process, and the upper and lower electrode layers 2, 3 are made of three layers of metal materials The metal material of the first layer is titanium, and the metal layer has the effect of enhancing the bonding force between the metal and the medium; the metal material of the second layer is nickel; the third layer, that is, the outermost metal material is gold; the upper and lower layers The electrode layers have the same or symmetrical metallization patterns; the upper and lower ele...

Embodiment 2

[0054] Such as image 3 , 4 The structure shown is the second embodiment of the single-layer capacitor element of the present invention, which includes a 0.125mm thick single-layer ceramic dielectric layer 1 and an upper electrode layer 2 and a lower electrode layer respectively positioned on the opposite surfaces of the ceramic dielectric layer 1 3. The upper and lower electrode layers 2, 3 are firmly attached to the surface of the ceramic dielectric layer 1 through a sputtering process, and the upper and lower electrode layers 2, 3 are composed of two layers of metal materials, Wherein the metal material of the first layer is titanium-tungsten alloy, and this metal layer has the function of strengthening the bonding force between metal and medium; the metal material of the second layer, the outermost layer, is gold-tin alloy; Or a symmetrical metallization pattern; there is a margin between the upper electrode layer and the surface of the ceramic dielectric layer to which i...

Embodiment 3

[0057] Such as Figure 5 , 6 The structure shown is the third embodiment of the present invention, which includes a 0.17mm thick single-layer ceramic dielectric layer 1 and an upper electrode layer 2 and a lower electrode layer 3 respectively located on two opposite surfaces of the ceramic dielectric layer 1. The upper and lower electrode layers 2, 3 are firmly attached to the surface of the ceramic dielectric layer 1 by a sputtering process, and the upper and lower electrode layers 2, 3 are composed of a layer of metal material, the metal material is gold ; There is the same or symmetrical metallization pattern between the upper and lower electrode layers; There is a margin 11 between the upper and lower electrode layers and the surface of the ceramic dielectric layer to which they are attached, and the upper margin and the surface of the ceramic dielectric layer The lower edge is symmetrical, this design is convenient for assembly, there is no distinction between upper and ...

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Abstract

Metal atoms are adhered to surface of ceramic dielectric directly under high-energy electric field through vacuum sputtering mode in high energy so as to overcome unreliable issue in intermediate transition layer or perforation connection existed in mode of thick film printed circuit. Comparing with similar products, the product produced by the disclosed technique possesses features of low cascade equivalent resistance, good high frequency performance in microwave from several GHz to some dozens of GHz, high fabricating precision prepared by photo etching. The invention is suitable for high frequency, microwave, minitype cases such as microwave power amplifier, and modules including blue teeth technical module, hybrid integrated circuit, as well as modules in handset and wireless microwave communication module.

Description

technical field [0001] The invention relates to a manufacturing method of a capacitor element, in particular to a manufacturing method of a single-layer capacitor element. The present invention also relates to a single-layer capacitor element manufactured by the above method. Background technique [0002] Among the techniques for making single-layer capacitor elements, the following ways are known: [0003] The patent applications GB2380062, US2003016485, and CN1396606A of AVX Corporation of the United States provide a method for manufacturing a single-layer capacitor element. The method is to first metallize the ceramic dielectric substrate, and then perform local grinding to remove the metal on the edge of the substrate and Chamfer. This method does not require chemical etching process, but each component needs to be processed individually, and products cannot be processed in batches, so the efficiency is low. [0004] The patent US6661639 of Presidio Corporation of the...

Claims

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Application Information

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IPC IPC(8): H01G4/00H01G4/005H01G4/008H01G4/12
Inventor 梁颖光庄严
Owner 梁颖光
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