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Static protection structure of SOI process

An electrostatic protection and process technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problem of not being directly applied, and achieve the effect of improving the anti-locking ability

Active Publication Date: 2018-03-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing SCR structure cannot be directly applied to the SOI process as the electrostatic protection structure of the circuit.

Method used

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  • Static protection structure of SOI process
  • Static protection structure of SOI process
  • Static protection structure of SOI process

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Experimental program
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Embodiment Construction

[0040] The electrostatic protection structure of the SOI process in the first embodiment of the present invention:

[0041] like figure 1 As shown, it is a plane structure diagram of the electrostatic protection structure 201 of the SOI process in the first embodiment of the present invention; figure 2 is along figure 1 The cross-sectional view of the AA line; image 3 Yes figure 1 The equivalent circuit diagram of the structure shown; the electrostatic protection structure 201 of the SOI process in the first embodiment of the present invention includes:

[0042] An SOI substrate, the SOI substrate includes a back substrate 101 , a buried dielectric layer 102 and a top layer of silicon 103 stacked in sequence. Preferably, the material of the back substrate 101 is silicon. The buried dielectric layer 102 is a buried oxide layer.

[0043] The electrostatic protection structure 201 is formed in the active region of the top layer silicon 103 of the SOI substrate. The elect...

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Abstract

The invention discloses an electrostatic protection structure of an SOI process. The electrostatic protection structure is formed in an active region of the top silicon of an SOI substrate, and comprises non-overlapped P-type and N-type wells, with a first diffusion region being formed in the P-type and N-type wells; a plurality of second N+ diffusion regions formed in the P-type well and arrangedalong a first side of the first diffusion region and a plurality of third N+ diffusion regions formed in the P-type well and arranged along the first side of the first diffusion region, the third P+diffusion regions being further away from the first side of the first diffusion region; and a plurality of second P+ diffusion regions formed in the N-type well and arranged along a second side of thefirst diffusion region and a plurality of third N+ diffusion regions formed in the N-type well and arranged along the second side of the first diffusion region, the third N+ diffusion region being further away from the second side of the first diffusion region. According to the invention, the current discharge capability of the device in the SOI process can be improved.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to an electrostatic protection structure of silicon on insulating substrate (SOI) technology. Background technique [0002] The electrostatic protection structure is usually implemented by a silicon controlled rectifier (SCR), and common SCR devices are formed on a bulk silicon substrate. Those skilled in the art know that a bulk silicon substrate means that the entire substrate is Composed of silicon, there is no buried oxide layer in the bulk silicon substrate, that is, there is no oxide layer to isolate the bottom of the device. The existing SCR has a vertical structure and can only be applied to a bulk silicon substrate structure. [0003] In the existing technology, it is often necessary to use SOI substrates. SOI is the abbreviation of Silicon-On-Insulator, Silicon means the top silicon; Insulator means the buried dielectric layer, usually a buried oxide layer; the buried...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor 苏庆
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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